公开(公告)号：US20250043427A1

公开(公告)日：2025-02-06

申请号：US18785394

申请日：2024-07-26

Applicant: ASM IP Holding B.V.

Inventor： Songwhe Herr ,  Dongok Shin ,  KiChul Um

IPC: C23C16/505 ,  C23C16/455

Abstract: A wafer processing apparatus with improved film uniformity is presented. The apparatus comprising a radio frequency (RF) enclosure enclosing and defining a reaction chamber; a showerhead placed inside of the reaction chamber configured to generating plasma for processing a wafer in the reaction chamber; a radio frequency (RF) power supply configured to generate RF and supply the generated RF to the showerhead; a plurality of capacitors connected in parallel and/or in serial between the RF power supply and the showerhead; and more than one auxiliary ground lines configured to be placed above the showerhead. The auxiliary ground lines are to be turned on sequentially for improving map profile.

公开(公告)号：US12183546B2

公开(公告)日：2024-12-31

申请号：US17196374

申请日：2021-03-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  YongGyu Han ,  SangJean Jeon ,  DooHan Kim ,  SangYeop Lee

IPC: H01J37/32 ,  C23C16/505

Abstract: A substrate processing apparatus capable of removing signal interference between reactors includes: a first reactor, a second reactor adjacent to the first reactor, and a power generator configured to supply first power to the first reactor and supply second power to the second reactor, wherein the power generator is further configured to synchronize phases of the first power and the second power.

公开(公告)号：US11414760B2

公开(公告)日：2022-08-16

申请号：US16588807

申请日：2019-09-30

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

Abstract: A substrate support unit for thin film deposition on a substrate including a pattern structure and a thin film deposition apparatus including the substrate support unit includes a heater; an RF electrode; a first rod connected to the heater; a second rod connected to the RF electrode; and an RF shield spaced apart from the second rod, disposed to surround the second rod, and extending in an extension direction of the second rod.

公开(公告)号：US20250087460A1

公开(公告)日：2025-03-13

申请号：US18958281

申请日：2024-11-25

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  YongGyu Han ,  SangJean Jeon ,  DooHan Kim ,  SangYeop Lee

IPC: H01J37/32 ,  C23C16/505

Abstract: A substrate processing apparatus capable of removing signal interference between reactors includes: a first reactor, a second reactor adjacent to the first reactor, and a power generator configured to supply first power to the first reactor and supply second power to the second reactor, wherein the power generator is further configured to synchronize phases of the first power and the second power.

公开(公告)号：US20210287878A1

公开(公告)日：2021-09-16

申请号：US17196374

申请日：2021-03-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  YongGyu Han ,  SangJean Jeon ,  DooHan Kim ,  SangYeop Lee

IPC: H01J37/32 ,  H03F3/21 ,  H03K5/24 ,  H01P5/16 ,  C23C16/505 ,  C23C16/458

Abstract: A substrate processing apparatus capable of removing signal interference between reactors includes: a first reactor, a second reactor adjacent to the first reactor, and a power generator configured to supply first power to the first reactor and supply second power to the second reactor, wherein the power generator is further configured to synchronize phases of the first power and the second power.

公开(公告)号：US20200080200A1

公开(公告)日：2020-03-12

申请号：US16565460

申请日：2019-09-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han ,  TaeHee Yoo ,  WanGyu Lim ,  DongHyun Ko

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/458

Abstract: A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.

公开(公告)号：US20230260754A1

公开(公告)日：2023-08-17

申请号：US18107588

申请日：2023-02-09

Applicant: ASM IP Holding B.V.

Inventor： Doohan Kim ,  YongGyu Han ,  KiChul Um ,  DaeYoun Kim

IPC: H01J37/32 ,  H01G5/16

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01G5/16 ,  H01J2237/024 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/332

Abstract: A substrate processing method capable of performing a stable plasma process includes: supplying a source gas under a first plasma atmosphere using a substrate processing apparatus including a power generation unit, a first reactor, and a matching network between the power generation unit and the first reactor; purging the source gas; supplying a reaction gas under a second plasma atmosphere; and purging the reaction gas, wherein setting a variable capacitor included in the matching network to a first value is performed during the purging of the source gas, and setting the variable capacitor to a second value is performed during the purging of the reaction gas.

公开(公告)号：US20220349058A1

公开(公告)日：2022-11-03

申请号：US17864698

申请日：2022-07-14

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

Abstract: A substrate support unit for thin film deposition on a substrate including a pattern structure and a thin film deposition apparatus including the substrate support unit includes a heater; an RF electrode; a first rod connected to the heater; a second rod connected to the RF electrode; and an RF shield spaced apart from the second rod, disposed to surround the second rod, and extending in an extension direction of the second rod.

公开(公告)号：US11274369B2

公开(公告)日：2022-03-15

申请号：US16565460

申请日：2019-09-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han ,  TaeHee Yoo ,  WanGyu Lim ,  DongHyun Ko

IPC: C23C16/458 ,  C23C16/455 ,  H01L21/02 ,  H01J37/32

Abstract: A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.