公开(公告)号：US10395921B2

公开(公告)日：2019-08-27

申请号：US15080004

申请日：2016-03-24

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Dae Youn Kim ,  Seung Woo Choi ,  Hyung Wook Noh ,  Yong Min Yoo ,  Hak Joo Lee

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/52 ,  C23C16/458

Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T−(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

公开(公告)号：USD724553S1

公开(公告)日：2015-03-17

申请号：US29484673

申请日：2014-03-12

Applicant: ASM IP Holding B.V.

Designer： Seung Woo Choi ,  Hyung Wook Noh ,  Jeong Jun Woo ,  Dae Youn Kim ,  Hyun Soo Jang

公开(公告)号：US09689072B2

公开(公告)日：2017-06-27

申请号：US14840117

申请日：2015-08-31

Applicant: ASM IP Holding B.V.

Inventor： Hyung Wook Noh ,  Seung Woo Choi ,  Dong Seok Kang

IPC: C23C16/26 ,  C23C16/455 ,  G02B1/111 ,  C23C16/44 ,  C23C16/50

CPC classification number: C23C16/26 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/50 ,  G02B1/111

Abstract: A method of depositing a thin film includes: supplying a first source gas to a reactor during a first time period; supplying a purge gas to the reactor during a second time period; supplying a second source gas to the reactor during a third time period; and supplying the purge gas to the reactor during a fourth time period, wherein the first source gas and the second source gas comprise polymer precursors, and wherein the first source gas and the second source gas are supplied at a temperature that is less than 100° C. or about 100° C. According to the method, uniformity and step coverage of a thin film can be improved by depositing an amorphous carbon layer using polymer precursors according to an Atomic layer deposition (ALD) method.

公开(公告)号：US20160284534A1

公开(公告)日：2016-09-29

申请号：US15080004

申请日：2016-03-24

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Dae Youn Kim ,  Seung Woo Choi ,  Hyung Wook Noh ,  Yong Min Yoo ,  Hak Joo Lee

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274

Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T−(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

Abstract translation: 提供了通过原子层沉积（ALD）方法在基板上形成具有目标厚度T的薄膜的方法。 该方法包括n个处理条件，每个处理条件各自具有不同于其的成长速率，并将a1确定为第一处理条件到第n处理条件的循环，使得| T（a1× G1 + a2×G2 + ... + an×Gn）| 小于G1，G2中的最小值。 。 。 和Gn，其中n是2或更大的整数，G1，...。 。 。 ，Gn分别表示作为第一处理条件的膜生长速度的第一膜生长速度。 。 。 以及作为第n处理条件的膜生长速度的第n膜生长速度，膜生长率表示在每个处理条件下每单位周期形成的膜的厚度。 当执行ALD时，成膜方法可以精确且均匀地控制薄膜的厚度。