Thin film deposition apparatus
    4.
    发明授权

    公开(公告)号:US10738381B2

    公开(公告)日:2020-08-11

    申请号:US15232603

    申请日:2016-08-09

    Abstract: Disclosed are a substrate holder and a semiconductor manufacturing apparatus including the substrate holder. The substrate holder provides a reaction region by making face-sealing contact with a reactor wall. The substrate holder has an elastic behavior when pressure is applied thereto while the substrate holder makes face-sealing contact with the reactor wall. The semiconductor manufacturing apparatus includes the substrate holder and a gas supply unit configured to supply gas to the reaction region provided by the reactor wall and the substrate holder.

    THIN FILM DEPOSITION APPARATUS
    6.
    发明申请
    THIN FILM DEPOSITION APPARATUS 审中-公开
    薄膜沉积装置

    公开(公告)号:US20170044666A1

    公开(公告)日:2017-02-16

    申请号:US15232603

    申请日:2016-08-09

    Abstract: Disclosed are a substrate holder and a semiconductor manufacturing apparatus including the substrate holder. The substrate holder provides a reaction region by making face-sealing contact with a reactor wall. The substrate holder has an elastic behavior when pressure is applied thereto while the substrate holder makes face-sealing contact with the reactor wall. The semiconductor manufacturing apparatus includes the substrate holder and a gas supply unit configured to supply gas to the reaction region provided by the reactor wall and the substrate holder.

    Abstract translation: 公开了一种衬底保持器和包括衬底保持器的半导体制造设备。 衬底保持器通过与反应器壁进行面密封接触来提供反应区域。 当衬底保持器与反应器壁进行面密封接触时,衬底保持器具有施加压力的弹性。 半导体制造装置包括衬底保持器和气体供给单元,该气体供给单元构造成将气体供应到由反应器壁和衬底保持器提供的反应区域。

    Deposition apparatus and deposition system having the same

    公开(公告)号:US10190214B2

    公开(公告)日:2019-01-29

    申请号:US15208114

    申请日:2016-07-12

    Abstract: A deposition apparatus includes: a substrate support having a main surface on which a substrate is placed; a body disposed on the main surface and including a hollow portion having an exposed upper portion; a plasma electrode unit provided at a inner circumferential surface of the body to separate the hollow portion into an upper space and a lower space; and a gas supply unit supplying process gas to the plasma electrode unit, wherein a gas exhaust channel extending from the lower space to an exhaust outlet provided at a top of the body is formed in the body.

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