公开(公告)号：US20250132149A1

公开(公告)日：2025-04-24

申请号：US18918187

申请日：2024-10-17

Applicant: ASM IP Holding B.V.

Inventor： Aditya Chauhan ,  Vivek Koladi Mootheri ,  Lorenzo Bottiglieri ,  Andrea IIIiberi ,  Michael Eugene Givens

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/455 ,  H01L29/786

Abstract: Methods for forming hydrogen barriers for, for example, channel layers in thin film transistors. The hydrogen barriers can comprise doped dielectrics such as magnesium-doped aluminum oxide. Further described are related structures and systems.

公开(公告)号：US20230377877A1

公开(公告)日：2023-11-23

申请号：US18319933

申请日：2023-05-18

Applicant: ASM IP Holding, B.V.

Inventor： Alessandra Leonhardt ,  Matthew Surman ,  Perttu Sippola ,  Ranjith Karuparambil Ramachandran ,  Charles Dezelah ,  Michael Givens ,  Andrea Illiberi ,  Tatiana Ivanova ,  Leo Lukose ,  Lorenzo Bottiglieri ,  Suvidyakumar Vinod Homkar ,  Vivek Koladi Mootheri

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

CPC classification number: H01L21/0228 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02318 ,  C23C16/405 ,  C23C16/56 ,  C23C16/45527 ,  C23C16/45553 ,  H01L29/0673

Abstract: Methods and related systems of processing a substrate. Described methods comprise executing a plurality of deposition cycles to form a doped hafnium zirconium oxide layer on the substrate.