公开(公告)号：US20240327982A1

公开(公告)日：2024-10-03

申请号：US18620116

申请日：2024-03-28

Applicant: ASM IP Holding B.V.

Inventor： Gaurav Pathak ,  Mikko Ruoho ,  Viljami J. Pore ,  Ming Liu

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/46

CPC classification number: C23C16/45542 ,  C23C16/342 ,  C23C16/45553 ,  C23C16/46

Abstract: Methods for depositing amorphous boron nitride layers on a substrate are provided. Exemplary methods include providing a boron precursor to a reaction chamber and providing nitrogen reactive species to the reaction chamber.

公开(公告)号：US12107005B2

公开(公告)日：2024-10-01

申请号：US17491684

申请日：2021-10-01

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore ,  Tommi Paavo Tynell ,  Yu Xu ,  Mikko Ruoho

IPC: H01L21/768 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/76837 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01J2237/332

Abstract: The current disclosure relates to methods of depositing silicon-containing material on a substrate comprising a gap, wherein the method comprises providing the substrate in a reaction chamber and depositing a carbon-containing inhibition layer on the substrate, and depositing silicon-containing material on the substrate. Depositing the inhibition layer comprises supplying a carbon precursor comprising carbon in the reaction chamber and supplying first plasma in the reaction chamber to form a first reactive species from the carbon precursor for forming the inhibition layer on the substrate. The inhibition layer is deposited preferentially in the vicinity of the top of the gap. The disclosure further relates to methods of forming a structure, methods of manufacturing a device and to a semiconductor processing apparatus.

公开(公告)号：US20240379347A1

公开(公告)日：2024-11-14

申请号：US18656799

申请日：2024-05-07

Applicant: ASM IP Holding B.V.

Inventor： Mikko Ruoho ,  Eva E. Tois ,  Viljami J. Pore ,  Marko Tuominen

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

Abstract: The present disclosure relates to methods and systems for selectively depositing a material comprising silicon and nitrogen onto a substrate comprising a first surface and a second surface, wherein the deposition occurs on the first surface of the substrate more so than on the second surface of the substrate. More specifically, the methods and systems comprise exposing a substrate that comprises a first surface and a second surface to a source of chlorine and a source of silicon, then exposing the substrate to a source of nitrogen to selectively deposit a material comprising silicon and nitrogen on the first surface of the substrate.

公开(公告)号：US20220108915A1

公开(公告)日：2022-04-07

申请号：US17491684

申请日：2021-10-01

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore ,  Tommi Paavo Tynell ,  Yu Xu ,  Mikko Ruoho

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32

Abstract: The current disclosure relates to methods of depositing silicon-containing material on a substrate comprising a gap, wherein the method comprises providing the substrate in a reaction chamber and depositing a carbon-containing inhibition layer on the substrate, and depositing silicon-containing material on the substrate. Depositing the inhibition layer comprises supplying a carbon precursor comprising carbon in the reaction chamber and supplying first plasma in the reaction chamber to form a first reactive species from the carbon precursor for forming the inhibition layer on the substrate. The inhibition layer is deposited preferentially in the vicinity of the top of the gap. The disclosure further relates to methods of forming a structure, methods of manufacturing a device and to a semiconductor processing apparatus.