公开(公告)号：US20240327982A1

公开(公告)日：2024-10-03

申请号：US18620116

申请日：2024-03-28

Applicant: ASM IP Holding B.V.

Inventor： Gaurav Pathak ,  Mikko Ruoho ,  Viljami J. Pore ,  Ming Liu

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/46

CPC classification number: C23C16/45542 ,  C23C16/342 ,  C23C16/45553 ,  C23C16/46

Abstract: Methods for depositing amorphous boron nitride layers on a substrate are provided. Exemplary methods include providing a boron precursor to a reaction chamber and providing nitrogen reactive species to the reaction chamber.