公开(公告)号：US10087525B2

公开(公告)日：2018-10-02

申请号：US14817953

申请日：2015-08-04

Applicant: ASM IP Holding B.V.

Inventor： Michael Schmotzer ,  Shawn Whaley

IPC: H01L21/687 ,  C23C16/458 ,  C23C16/44

Abstract: A reaction system for processing semiconductor substrates is disclosed. The reaction system includes a susceptor for holding the substrate as well as a baseplate as a part of housing for the reaction system. A pin located on the susceptor can interact with a baseplate feature located on the baseplate to result in a variable gap between the susceptor and the baseplate. The baseplate feature may take the form of a series of steps, a wedge, or a milled-out feature.

公开(公告)号：US20170040206A1

公开(公告)日：2017-02-09

申请号：US14817953

申请日：2015-08-04

Applicant: ASM IP Holding B.V.

Inventor： Michael Schmotzer ,  Shawn Whaley

IPC: H01L21/687 ,  C23C16/458

CPC classification number: C23C16/4588 ,  C23C16/4401 ,  C23C16/4412 ,  H01L21/68735 ,  H01L21/68785

Abstract: A reaction system for processing semiconductor substrates is disclosed. The reaction system includes a susceptor for holding the substrate as well as a baseplate as a part of housing for the reaction system. A pin located on the susceptor can interact with a baseplate feature located on the baseplate to result in a variable gap between the susceptor and the baseplate. The baseplate feature may take the form of a series of steps, a wedge, or a milled-out feature.

Abstract translation: 公开了一种用于处理半导体衬底的反应系统。 反应系统包括用于保持基底的基座以及作为反应系统的壳体的一部分的基板。 位于基座上的销可以与位于基板上的底板特征相互作用，从而导致基座与底板之间的可变间隙。 底板特征可以采取一系列步骤，楔形或铣削特征的形式。