GENERATING AN ALIGNMENT SIGNAL BASED ON LOCAL ALIGNMENT MARK DISTORTIONS

    公开(公告)号:US20230176494A1

    公开(公告)日:2023-06-08

    申请号:US17922922

    申请日:2021-04-22

    CPC classification number: G03F9/7088 G03F9/7092 G03F9/7049 G03F7/70633

    Abstract: A method for generating an alignment signal that includes detecting local dimensional distortions of an alignment mark and generating the alignment signal based on the alignment mark. The alignment signal is weighted based on the local dimensional distortions of the alignment mark. Detecting the local dimensional distortions can include irradiating the alignment mark with radiation, the alignment mark including a geometric feature, and detecting one or more phase and/or amplitude shifts in reflected radiation from the geometric feature. The one or more phase and/or amplitude shifts correspond to the local dimensional distortions of the geometric feature. A parameter of the radiation, an alignment inspection location within the geometric feature, an alignment inspection location on a layer of a structure, and/or a radiation beam trajectory across the geometric feature may be determined based on the one or more detected phase and/or amplitude shifts.

    GENERATING AN ALIGNMENT SIGNAL WITHOUT DEDICATED ALIGNMENT STRUCTURES

    公开(公告)号:US20250060680A1

    公开(公告)日:2025-02-20

    申请号:US18721405

    申请日:2022-12-14

    Abstract: Generating an alignment signal for alignment of features in a layer of a substrate as part of a semiconductor manufacturing process is described. The present systems and methods can be faster and/or generate more information than typical methods for generating alignment signals because they utilize one or more existing structures in a patterned semiconductor wafer instead of a dedicated alignment structure. A feature (not a dedicated alignment mark) of the patterned semiconductor wafer is continuously scanned, where the scanning includes: continuously irradiating the feature with radiation; and continuously detecting reflected radiation from the feature. The scanning is performed perpendicular to the feature, along one side of the feature, or along both sides of the feature.

    INTENSITY IMBALANCE CALIBRATION ON AN OVERFILLED BIDIRECTIONAL MARK

    公开(公告)号:US20240263941A1

    公开(公告)日:2024-08-08

    申请号:US18562675

    申请日:2022-05-24

    Abstract: Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to accurately expose patterns on the substrate. An example method can include receiving a measurement signal including a combined intensity signal corresponding to first and second diffracted light beams diffracted from first and second alignment targets having different orientations. The example method can further include fitting the combined intensity signal using templates to determine weight values and determining, based on the templates and weight values, first and second intensity sub-signals corresponding to the first and second diffracted light beams. The method can further include determining first and second intensity imbalance signals based on the first and second intensity sub-signals and determining a set of corrections to the measurement signal based on the first and second intensity imbalance signals.

    WAFER ALIGNMENT USING FORM BIREFRINGENCE OF TARGETS OR PRODUCT

    公开(公告)号:US20220137523A1

    公开(公告)日:2022-05-05

    申请号:US17432019

    申请日:2020-02-06

    Abstract: An alignment method includes directing an illumination beam with a first polarization state to form a diffracted beam with a second polarization state from an alignment target, and passing the diffracted beam through a polarization analyzer. The alignment method further includes measuring a polarization state of the diffracted beam and determining a location of the alignment target from the measured polarization state relative to its initial polarization state. The alignment target includes a plurality of diffraction gratings with a single pitch and two or more duty cycles, wherein the pitch is smaller than a wavelength of the illumination beam, and the location of the alignment target corresponds to the duty cycle of the diffraction grating.

    NOISE CORRECTION FOR ALIGNMENT SIGNAL

    公开(公告)号:US20220066334A1

    公开(公告)日:2022-03-03

    申请号:US17415711

    申请日:2019-12-12

    Abstract: A method of applying a measurement correction includes determining an orthogonal subspace used to characterize the measurement as a plot of data. A first axis of the orthogonal subspace corresponds to constructive interference output from an interferometer of the metrology system plus a first error variable and a second axis of the orthogonal subspace corresponds to destructive interference output from the interferometer of the metrology system plus a second error variable. The method also includes determining a slope of the plot of data and determining a fitted line to the plot of data in the orthogonal subspace based on the slope.

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