公开(公告)号：US20040043311A1

公开(公告)日：2004-03-04

申请号：US10654406

申请日：2003-09-04

Applicant: ASML Holding N.V.

Inventor： Andrew W. McCullough ,  Christopher Mason ,  Louis Markoya ,  Harry Sewell

IPC: G03F007/20 ,  G03F009/00

CPC classification number: G03F7/70516 ,  G03F7/70283 ,  G03F7/70358 ,  G03F7/70466 ,  G03F7/70733

Abstract: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used. In another embodiment, the reticle stage has a range of motion permitting scanning of an additional calibration reticle. This permits rapid real time system calibration.

公开(公告)号：US20040131954A1

公开(公告)日：2004-07-08

申请号：US10735658

申请日：2003-12-16

Applicant: ASML Holding N.V.

Inventor： Andrew W. McCullough

IPC: G03F009/00 ,  G03B027/00

CPC classification number: G03F1/38 ,  G03F1/46 ,  G03F1/50 ,  G03F1/54

Abstract: A reticle or mask for use in projecting a circuit pattern, having a transparent substrate with a reflective or dielectric layer thereon. An opaque or blocking layer is placed over the reflective layer. The opaque layer then has a predetermined circuit pattern etched therein. In one embodiment, the opaque layer and the reflective layer are the same size. In another embodiment, the opaque layer has a size larger than the reflective layer. This permits the opaque layer to be adjacent the substrate, which is advantageous when projection optics having a high numerical aperture are used. The reticle of the present invention has particular advantage when using source wavelengths of between 157 nanometers and 365 nanometers. The reflective layer or land has a reflectance greater than chrome, and preferably greater than sixty percent. Therefore, the reflective layer greatly reduces reticle warm-up and thermal distortion.

Abstract translation: 用于投影电路图案的掩模版或掩模，其上具有在其上具有反射或介电层的透明基板。 将不透明或阻挡层放置在反射层上。 不透明层然后具有蚀刻在其中的预定电路图案。 在一个实施例中，不透明层和反射层具有相同的尺寸。 在另一个实施例中，不透明层的尺寸大于反射层。 这使得不透明层与衬底相邻，这在使用具有高数值孔径的投影光学器件时是有利的。 当使用157纳米和365纳米之间的源波长时，本发明的掩模版具有特别的优点。 反射层或平台的反射率大于铬，优选大于百分之六十。 因此，反射层大大降低了标线的预热和热变形。

公开(公告)号：US20040239908A1

公开(公告)日：2004-12-02

申请号：US10449908

申请日：2003-05-30

Applicant: ASML Holding N.V.

Inventor： Arno Bleeker ,  Wenceslao A. Cebuhar ,  Jason D. Hintersteiner ,  Andrew W. McCullough ,  Solomon Wasserman

IPC: G03B027/54

CPC classification number: G03F7/70466 ,  G03F7/70283 ,  G03F7/70291 ,  G03F7/70358 ,  G03F7/70558

Abstract: A maskless lithography system that writes patterns on an object. The system can include an illumination system, the object, spatial light modulators (SLMs), and a controller. The SLMs can pattern light from the illumination system before the object receives the light. The SLMs can include a leading set and a trailing set of the SLMs. The SLMs in the leading and trailing sets change based on a scanning direction of the object. The controller can transmit control signals to the SLMs based on at least one of light pulse period information, physical layout information about the SLMs, and scanning speed of the object. The system can also correct for dose non-uniformity using various methods.

Abstract translation: 在对象上写入图案的无掩模光刻系统。 该系统可以包括照明系统，物体，空间光调制器（SLM）和控制器。 在对象接收到光之前，SLM可以对来自照明系统的光进行图案化。 SLM可以包括一个前导集合和一组尾随SLM。 前导和后置集合中的SLM根据对象的扫描方向而改变。 控制器可以基于光脉冲周期信息，关于SLM的物理布局信息和对象的扫描速度中的至少一个来向SLM发送控制信号。 该系统还可以使用各种方法校正剂量不均匀性。