公开(公告)号：US20040239283A1

公开(公告)日：2004-12-02

申请号：US10449001

申请日：2003-06-02

Applicant: ASML Holding N.V.

Inventor： Daniel N. Galburt ,  Frederick M. Carter ,  Stephen Roux

IPC: G05B011/32

CPC classification number: G03F7/70066

Abstract: A method, apparatus, and system for controlling a reticle-masking blade in a photolithography system. A reticle-masking blade is supported with a reticle-masking blade carriage assembly. The reticle-masking blade carriage assembly is levitated at a position with respect to a reference frame and at an orientation with respect to the reference frame. Preferably, the reticle-masking blade carriage assembly is electromagnetically levitated. At least one of the position and the orientation of the reticle-masking blade carriage assembly is measured. At least one of the position and the orientation of the reticle-masking blade carriage assembly is controlled. Optionally, the reticle-masking blade carriage assembly is moved within a dimension within a range defined by the reference frame. The dimension can be two dimensions. The movement of the reticle-masking blade carriage assembly can be controlled.

Abstract translation: 一种用于在光刻系统中控制掩模掩模刀片的方法，装置和系统。 掩模版掩模刀片由掩模版掩模刀片托架组件支撑。 掩模版掩模刀片托架组件相对于参考框架在相对于参考框架的取向处悬浮。 优选地，掩模掩模刮板滑架组件是电磁悬浮的。 测量掩模版掩模片滑架组件的位置和取向中的至少一个。 掩模版掩模刀片支架组件的位置和取向中的至少一个被控制。 可选地，掩模版掩模刮板滑架组件在由参考框限定的范围内的尺寸内移动。 尺寸可以是两个维度。 可以控制掩模掩模刮板托架组件的运动。

公开(公告)号：US20040239911A1

公开(公告)日：2004-12-02

申请号：US10449663

申请日：2003-06-02

Applicant: ASML Holding N.V.

Inventor： Frederick M. Carter ,  Daniel N. Galburt ,  Stephen Roux

IPC: G03B027/62

CPC classification number: G03F7/70066 ,  G03F7/70758 ,  G03F7/70816 ,  G03F7/70825 ,  H02K41/03 ,  H02K2201/18

Abstract: A method, apparatus, and system for controlling a reticle-masking blade in a photolithography system. A reticle-masking blade is supported with a reticle-masking blade carriage assembly. The reticle-masking blade carriage assembly is levitated at a position with respect to a reference frame and at an orientation with respect to the reference frame. Preferably, the reticle-masking blade carriage assembly is electromagnetically levitated. At least one of the position and the orientation of the reticle-masking blade carriage assembly is measured. At least one of the position and the orientation of the reticle-masking blade carriage assembly is controlled. Optionally, the reticle-masking blade carriage assembly is moved within a dimension within a range defined by the reference frame. The dimension can be two dimensions. The movement of the reticle-masking blade carriage assembly can be controlled.

Abstract translation: 一种用于在光刻系统中控制掩模掩模刀片的方法，装置和系统。 掩模版掩模刀片由掩模版掩模刀片托架组件支撑。 掩模版掩模刀片托架组件相对于参考框架在相对于参考框架的取向处悬浮。 优选地，掩模掩模刮板滑架组件是电磁悬浮的。 测量掩模版掩模片滑架组件的位置和取向中的至少一个。 掩模版掩模刀片支架组件的位置和取向中的至少一个被控制。 可选地，掩模版掩模刮板滑架组件在由参考框限定的范围内的尺寸内移动。 尺寸可以是两个维度。 可以控制掩模掩模刮板托架组件的运动。

公开(公告)号：US20040257554A1

公开(公告)日：2004-12-23

申请号：US10896057

申请日：2004-07-22

Applicant: ASML Holding N.V.

Inventor： Santiago E. del Puerto ,  Stephen Roux ,  Justin L. Kreuzer

IPC: G03B027/58

CPC classification number: H01L21/67225 ,  G03F7/707 ,  G03F7/7075 ,  G03F7/70808 ,  G03F9/7011 ,  G03F9/7096 ,  H01L21/67201 ,  H01L21/681

Abstract: A method utilizing a lithography system comprises a lithography patterning chamber, a wafer exchange chamber separated from the lithography patterning chamber by a first gate valve, and at least one alignment load-lock separated from the wafer exchange chamber by a second gate valve. The alignment load-lock includes an alignment stage that aligns a wafer during pump-down. The alignment load-lock can be uni-directional or bi-directional. The lithography system can include one or multiple alignment load-locks.

Abstract translation: 使用光刻系统的方法包括光刻图案化室，通过第一闸阀与光刻图案化室分离的晶片交换室以及通过第二闸阀与晶片交换室分离的至少一个对准负载锁定。 对准负载锁定包括在抽空期间对准晶片的对准级。 对齐负载锁定可以是单向的或双向的。 光刻系统可以包括一个或多个对准加载锁。