公开(公告)号：US10985082B2

公开(公告)日：2021-04-20

申请号：US17007614

申请日：2020-08-31

Applicant: Akash Systems, Inc.

Inventor： Tyrone D. Mitchell, Jr. ,  Felix Ejeckam ,  Daniel Francis ,  Paul Saunier ,  Kris Kong

IPC: H04B10/50 ,  H04B7/185 ,  H01L27/06 ,  H01L23/373 ,  H04W52/52 ,  H04B1/02 ,  H04B1/06 ,  H04B10/564 ,  G01J3/44 ,  H04B1/04 ,  B64G1/10

Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.

公开(公告)号：US11495515B2

公开(公告)日：2022-11-08

申请号：US17007718

申请日：2020-08-31

Applicant: Akash Systems, Inc.

Inventor： Tyrone D. Mitchell, Jr. ,  Felix Ejeckam ,  Daniel Francis ,  Paul Saunier ,  Kris Kong

IPC: H01L23/373 ,  H01L27/06 ,  H04B1/02 ,  H04B1/04 ,  H04B1/06 ,  H04B7/185 ,  H04B10/50 ,  H04B10/564 ,  H04W52/52 ,  B64G1/10 ,  G01J3/44

Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.