公开(公告)号：US11495515B2

公开(公告)日：2022-11-08

申请号：US17007718

申请日：2020-08-31

Applicant: Akash Systems, Inc.

Inventor： Tyrone D. Mitchell, Jr. ,  Felix Ejeckam ,  Daniel Francis ,  Paul Saunier ,  Kris Kong

IPC: H01L23/373 ,  H01L27/06 ,  H04B1/02 ,  H04B1/04 ,  H04B1/06 ,  H04B7/185 ,  H04B10/50 ,  H04B10/564 ,  H04W52/52 ,  B64G1/10 ,  G01J3/44

Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.

公开(公告)号：US10985082B2

公开(公告)日：2021-04-20

申请号：US17007614

申请日：2020-08-31

Applicant: Akash Systems, Inc.

Inventor： Tyrone D. Mitchell, Jr. ,  Felix Ejeckam ,  Daniel Francis ,  Paul Saunier ,  Kris Kong

IPC: H04B10/50 ,  H04B7/185 ,  H01L27/06 ,  H01L23/373 ,  H04W52/52 ,  H04B1/02 ,  H04B1/06 ,  H04B10/564 ,  G01J3/44 ,  H04B1/04 ,  B64G1/10

Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.

公开(公告)号：US10811335B2

公开(公告)日：2020-10-20

申请号：US16403894

申请日：2019-05-06

Applicant: Akash Systems, Inc.

Inventor： Felix Ejeckam ,  Tyrone D. Mitchell, Jr. ,  Paul Saunier

IPC: H01L23/36 ,  H01L23/373 ,  H01L29/20 ,  B64G1/50 ,  B64G1/10 ,  H01L29/778 ,  H04B1/04 ,  H04B1/00

Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.

公开(公告)号：US11594466B2

公开(公告)日：2023-02-28

申请号：US17021389

申请日：2020-09-15

Applicant: Akash Systems, Inc.

Inventor： Felix Ejeckam ,  Tyrone D. Mitchell, Jr. ,  Paul Saunier

IPC: H01L29/20 ,  H01L23/373 ,  B64G1/50 ,  B64G1/10 ,  H01L29/778 ,  H04B1/04 ,  H04B1/00

Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.

公开(公告)号：US10804853B2

公开(公告)日：2020-10-13

申请号：US16444018

申请日：2019-06-18

Applicant: Akash Systems, Inc.

Inventor： Felix Ejeckam ,  Tyrone D. Mitchell, Jr. ,  Paul Saunier

IPC: H03F1/02 ,  H03F3/195 ,  H03F3/213 ,  H01L29/778 ,  H01L23/66 ,  H03F3/24 ,  H01L29/20

Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity.An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.