公开(公告)号：US20210053147A1

公开(公告)日：2021-02-25

申请号：US17090709

申请日：2020-11-05

Applicant: Applied Materials, Inc.

Inventor： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash J. MAYUR ,  Aaron Muir HUNTER ,  Bruce E. ADAMS ,  Joseph M. RANISH

IPC: B23K26/06 ,  B23K26/352 ,  B23K26/073 ,  H01L21/324 ,  H01L21/268

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US20190139773A1

公开(公告)日：2019-05-09

申请号：US16200538

申请日：2018-11-26

Applicant: Applied Materials, Inc.

Inventor： Paul CAREY ,  Aaron Muir HUNTER ,  Dean JENNINGS ,  Abhilash J. MAYUR ,  Stephen MOFFATT ,  William SCHAFFER ,  Timothy N. THOMAS ,  Mark YAM

IPC: H01L21/265 ,  H01L21/268 ,  H01L29/66 ,  H01L29/06 ,  H01L21/324

Abstract: The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

公开(公告)号：US20180315639A1

公开(公告)日：2018-11-01

申请号：US16029159

申请日：2018-07-06

Applicant: Applied Materials, Inc.

Inventor： Mehran BEHDJAT ,  Norman L. TAM ,  Aaron Muir HUNTER ,  Joseph M. RANISH ,  Koji NAKANISHI ,  Toshiyuki NAKAGAWA

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/50

CPC classification number: H01L21/68757 ,  C23C16/50 ,  H01L21/67115 ,  H01L21/68735 ,  H01L2221/683

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

公开(公告)号：US20170309529A1

公开(公告)日：2017-10-26

申请号：US15637944

申请日：2017-06-29

Applicant: Applied Materials, Inc.

Inventor： Wolfgang R. ADERHOLD ,  Aaron Muir HUNTER ,  Joseph M. RANISH

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/324

Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

公开(公告)号：US20170221701A1

公开(公告)日：2017-08-03

申请号：US15422116

申请日：2017-02-01

Applicant: Applied Materials, Inc.

Inventor： Aaron Muir HUNTER ,  Kong Lung Samuel CHAN ,  Christine Y. OUYANG ,  Ludovic GODET

IPC: H01L21/027 ,  H01L21/687 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/324

CPC classification number: H01L21/0271 ,  G03F7/0002 ,  H01L21/31058 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/68764

Abstract: A semiconductor processing method and semiconductor device are described. A substrate having a directed self-assembling material disposed thereon is heated to a temperature above the glass transition temperature of the directed self-assembling material, for example from about 325° C. to 380° C., in an RTP process. The substrate is then cooled at a controlled rate of less than 5° C./sec to 100° C. or lower.

公开(公告)号：US20160300752A1

公开(公告)日：2016-10-13

申请号：US15188706

申请日：2016-06-21

Applicant: Applied Materials, Inc.

Inventor： Mehran BEHDJAT ,  Aaron Muir HUNTER ,  Joseph M. RANISH ,  Norman TAM ,  Jeffrey TOBIN ,  Jiping LI ,  Martin TRAN

IPC: H01L21/687 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/68735 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/68757

Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.

Abstract translation: 本公开的实施例一般涉及在热处理室中使用的支撑筒。 在一个实施例中，支撑筒包括中空圆柱体，其包括内周表面，平行于内周表面的外周表面，其中内周表面和外周表面沿着平行于该内周表面的纵向轴线的方向延伸 支撑圆柱体和从外周表面径向延伸到内周表面的横向部分，其中所述侧向部分包括具有第一倾斜部分，第一圆形部分和第一平面部分的第一端部，所述第一平坦部分将第一倾斜部分和 第一圆形部分和与第一端相对的第二端，第二端部具有第二倾斜部分，第二圆形部分和连接第二倾斜部分和第二圆形部分的第二平面部分。

公开(公告)号：US20160293414A1

公开(公告)日：2016-10-06

申请号：US15186499

申请日：2016-06-19

Applicant: Applied Materials, Inc.

Inventor： Bruce E. ADAMS ,  Aaron Muir HUNTER ,  Stephen MOFFATT

IPC: H01L21/02

CPC classification number: H01L21/02686 ,  H01L21/02521 ,  H01L21/268

Abstract: Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.

公开(公告)号：US20200373212A1

公开(公告)日：2020-11-26

申请号：US16989543

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： Wolfgang R. ADERHOLD ,  Aaron Muir HUNTER ,  Joseph M. RANISH

IPC: H01L21/66 ,  H01L21/324 ,  H01L21/67

Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

公开(公告)号：US20160020117A1

公开(公告)日：2016-01-21

申请号：US14805232

申请日：2015-07-21

Applicant: Applied Materials, Inc.

Inventor： Aaron Muir HUNTER ,  Amikam SADE ,  Samuel C. HOWELLS ,  Douglas E. HOLMGREN ,  Bruce E. ADAMS ,  Theodore P. MOFFITT ,  Stephen MOFFATT

IPC: H01L21/324 ,  H01L21/67 ,  B23K26/70 ,  B23K26/073 ,  B23K26/08 ,  B23K26/00 ,  H01L21/268 ,  B23K26/0622

CPC classification number: B23K26/70 ,  B23K26/0732 ,  B23K26/082 ,  B23K26/352 ,  H01L21/268 ,  H01L21/67115

Abstract: Apparatus, system, and method for thermally treating a substrate. A source of pulsed electromagnetic energy can produce pulses at a rate of at least 100 Hz. A movable substrate support can move a substrate relative to the pulses of electromagnetic energy. An optical system can be disposed between the energy source and the movable substrate support, and can include components to shape the pulses of electromagnetic energy toward a rectangular profile. A controller can command the source of electromagnetic energy to produce pulses of energy at a selected pulse rate. The controller can also command the movable substrate support to scan in a direction parallel to a selected edge of the rectangular profile at a selected speed such that every point along a line parallel to the selected edge receives a predetermined number of pulses of electromagnetic energy.

Abstract translation: 用于热处理基底的装置，系统和方法。 脉冲电磁能源可以以至少100Hz的速率产生脉冲。 可移动衬底支撑件可以相对于电磁能的脉冲移动衬底。 光学系统可以设置在能量源和可移动衬底支撑件之间，并且可以包括将电磁能的脉冲朝向矩形轮廓成形的部件。 控制器可以命令电磁能量源以选定的脉冲速率产生能量脉冲。 控制器还可以以可选择的速度命令可移动衬底支撑件沿平行于所述矩形轮廓的选定边缘的方向进行扫描，使得沿着与所选边缘平行的线的每个点接收预定数量的电磁能量脉冲。

公开(公告)号：US20150267300A1

公开(公告)日：2015-09-24

申请号：US14219644

申请日：2014-03-19

Applicant: Applied Materials, Inc.

Inventor： Joseph M. RANISH ,  Aaron Muir HUNTER

IPC: C23C16/52 ,  C23C16/46 ,  C23C16/44 ,  C23C16/48

CPC classification number: C23C16/46 ,  C23C16/4411 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/48 ,  C23C16/481 ,  C23C16/482 ,  C23C16/483 ,  C23C16/488

Abstract: Embodiments described herein provide a substrate processing apparatus that includes a vacuum chamber comprising a first dome and a second dome, a substrate support disposed inside the vacuum chamber between the first and second domes, a collimated energy source arranged in a compartmented housing and positioned proximate the second dome, wherein the second dome is between the collimated energy source and the substrate support. At least a portion of the second dome and the substrate support may be optically transparent to the collimated energy from the collimated energy source.

Abstract translation: 本文所述的实施例提供了一种基板处理装置，其包括真空室，该真空室包括第一圆顶和第二圆顶，设置在第一和第二圆顶之间的真空室内部的基板支撑件，准直的能量源，布置在分隔的壳体中， 第二圆顶，其中所述第二圆顶在准直能量源和所述衬底支撑件之间。 第二圆顶和衬底支撑件的至少一部分可以对于来自准直能量源的准直能量而言是光学透明的。