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    GRAPHITE SUSCEPTOR
    1.
    发明申请
    GRAPHITE SUSCEPTOR 审中-公开

    公开(公告)号：US20180298494A1

    公开(公告)日：2018-10-18

    申请号：US16011383

    申请日：2018-06-18

    Applicant: Applied Materials, Inc.

    Inventor： Preetham RAO ,  Subramani IYER ,  Kartik SHAH ,  Mehran BEHDJAT

    IPC: C23C16/458 ,  H01L21/687 ,  H01L21/67

    Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

    APPARATUS FOR REDUCING THE EFFECT OF CONTAMINATION ON A RAPID THERMAL PROCESS
    2.
    发明申请
    APPARATUS FOR REDUCING THE EFFECT OF CONTAMINATION ON A RAPID THERMAL PROCESS 有权
    减少污染对快速热过程的影响的装置

    公开(公告)号：US20150155190A1

    公开(公告)日：2015-06-04

    申请号：US14550781

    申请日：2014-11-21

    Applicant: Applied Materials, Inc.

    Inventor： Aaron MILLER ,  Mehran BEHDJAT ,  Norman L. TAM ,  Michael LIU

    IPC: H01L21/67 ,  H01L21/66 ,  H01L21/324

    CPC classification number: H01L21/67115 ,  H01L21/67248 ,  H01L21/68792

    Abstract: Embodiments of the present disclosure provide a cover assembly that includes a cover disposed between a device side surface of a substrate and a reflector plate, which are disposed within a thermal processing chamber. The presence of the cover between the device side surface of a substrate and a reflector plate has many advantages over conventional thermal processing chamber designs, which include an improved temperature uniformity during processing, a reduced chamber down time and an improved cost-of-ownership of the processes performed in the thermal processing chamber. In some configurations, the cover includes two or more ports that are formed therein and are positioned to deliver a gas, from a space formed between the reflector plate and the cover, to desired regions of the substrate during processing to reduce the temperature variation across the substrate.

    Abstract translation: 本公开的实施例提供一种盖组件，其包括设置在基板的装置侧表面和反射板之间的盖，所述盖设置在热处理室内。 衬底的器件侧表面与反射板之间的存在与常规热处理室设计相比具有许多优点，其包括在处理期间改进的温度均匀性，减少的室停机时间和改进的拥有成本 在热处理室中进行的处理。 在一些构造中，盖包括形成在其中的两个或更多个端口，并且被定位成在处理期间将气体从形成在反射板和盖之间的空间传送到基板的期望区域，以减少横跨 基质。

    THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION
    3.
    发明申请
    THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION 有权
    具有改善气体流量分布的热反应器

    公开(公告)号：US20140079376A1

    公开(公告)日：2014-03-20

    申请号：US14088013

    申请日：2013-11-22

    Applicant: Applied Materials, Inc.

    Inventor： Ming-Kuei (Michael) TSENG ,  Norman L. TAM ,  Yoshitaka YOKOTA ,  Agus S. TJANDRA ,  Robert NAVASCA ,  Mehran BEHDJAT ,  Sundar RAMAMURTHY ,  Kedarnath SANGAM ,  Alexander N. LERNER

    IPC: H01L21/67 ,  F27D7/06

    CPC classification number: H01L21/67115 ,  F27D7/06 ,  H01L21/67017 ,  H01L21/67098

    Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

    Abstract translation: 本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。 本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件， 室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上 ，并且排气组件限定了被配置为延长处理量的排气量。

    ELECTRON BEAM WELDING OF LARGE VACUUM CHAMBER BODY HAVING A HIGH EMISSIVITY COATING
    4.
    发明申请
    ELECTRON BEAM WELDING OF LARGE VACUUM CHAMBER BODY HAVING A HIGH EMISSIVITY COATING 有权
    具有高电感涂层的大型真空室体的电子束焊接

    公开(公告)号：US20130327764A1

    公开(公告)日：2013-12-12

    申请号：US13966329

    申请日：2013-08-14

    Applicant: Applied Materials, Inc.

    Inventor： Shinichi KURITA ,  Mehran BEHDJAT ,  Makoto INAGAWA

    IPC: B65D6/02 ,  B65D6/32

    CPC classification number: B65D7/06 ,  B23K15/0006 ,  B65D7/38 ,  H01L21/67379

    Abstract: Embodiments disclosed herein relate to a large vacuum chamber body that has been welded together. The chamber body may have a high emissivity coating on at least one surface therein. Due to the large size of the chamber body, the chamber body may be formed by welding several pieces together rather than forging the body from a single piece of metal. The pieces may be welded together at a location spaced from the corner of the body, which may be under the greatest stress during evacuation, to ensure that the weld, which may be the weakest point in the body, does not fail. At least one surface of the chamber body may be coated with a high emissivity coating to aid in heat transfer from incoming, heated substrates. The high emissivity coating may increase substrate throughput by lowering the time that may be needed to reduce the substrate temperature.

    Abstract translation: 本文公开的实施例涉及已经焊接在一起的大型真空室主体。 腔体可以在其中的至少一个表面上具有高发射率涂层。 由于腔室主体的尺寸较大，可以通过将多个部件焊接在一起而不是从单个金属件锻造主体而形成腔体。 这些部件可以在与身体的角部间隔开的位置处被焊接在一起，该位置在排空期间可能处于最大的应力下，以确保可能是身体中最弱点的焊缝不会失效。 室主体的至少一个表面可以涂覆有高发射率涂层，以帮助来自加热的基底的热传递。 高发射率涂层可以通过降低降低衬底温度所需的时间来增加衬底通量。

    SEMICONDUCTOR PROCESSING CHAMBER
    6.
    发明申请
    SEMICONDUCTOR PROCESSING CHAMBER 审中-公开

    公开(公告)号：US20170294325A1

    公开(公告)日：2017-10-12

    申请号：US15417865

    申请日：2017-01-27

    Applicant: Applied Materials, Inc.

    Inventor： Aaron Muir HUNTER ,  Mehran BEHDJAT ,  Niraj MERCHANT ,  Douglas R. MCALLISTER ,  Dongming IU ,  Kong Lung CHAN ,  Lara HAWRYLCHAK

    IPC: H01L21/67

    Abstract: A semiconductor processing apparatus is described that has a body with a wall defining two processing chambers within the body; a passage through the wall forming a fluid coupling between the two processing chambers; a lid removably coupled to the body, the lid having a portal in fluid communication with the passage; a gas activator coupled to the lid outside the processing chambers, the gas activator having an outlet in fluid communication with the portal of the lid; a substrate support disposed in each processing chamber, each substrate support having at least two heating zones, each with an embedded heating element; a gas distributor coupled to the lid facing each substrate support; and a thermal control member coupled to the lid at an edge of each gas distributor.

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