公开(公告)号：US11270864B2

公开(公告)日：2022-03-08

申请号：US16828886

申请日：2020-03-24

Applicant: Applied Materials, Inc.

Inventor： Costel Biloiu ,  Adam Calkins ,  Alexander C. Kontos ,  James J. Howarth

IPC: H01J27/02 ,  H01J37/317 ,  H01J37/08

Abstract: Disclosed herein are approaches for adjusting extraction slits of an extraction plate using a set of adjustable beam blockers. In one approach, an ion extraction optics may include an extraction plate including a first opening and a second opening, and a first beam blocker extending over the first opening and a second beam blocker extending over the second opening. Each of the first and second beam blockers may include an inner slit defined by a first distance between an inner edge and the extraction plate, and an outer slit defined by a second distance between an outer edge and the extraction plate, wherein the first and second beam blockers are movable to vary at least one of the first distance and the second distance. As a result, extraction through the inner and outer slits of ion beamlets characterized by similar mean angles may be achieved.

公开(公告)号：US20220189772A1

公开(公告)日：2022-06-16

申请号：US17122323

申请日：2020-12-15

Applicant: Applied Materials, Inc.

Inventor： Shurong Liang ,  Alexander C. Kontos ,  Il-Woong Koo

IPC: H01L21/033

Abstract: A method for patterning structures including providing a layer stack having a plurality of device layers and a hardmask layer disposed in a stacked arrangement, the layer stack having a plurality of trenches formed therein, the trenches extending through the hardmask layer and into at least one of the device layers, the trenches having lateral sidewalls with a first slope relative to a plane perpendicular to upper surfaces of the device layers, and performing a sputter etching process wherein ion beams are directed toward the hardmask layer to etch the hardmask layer and cause etched material from the hardmask layer to be redistributed along the lateral sidewalls of the trenches to provide the lateral sidewalls with a second slope relative to the plane perpendicular to the upper surfaces of the device layers, the second slope less than the first slope.

公开(公告)号：US20210305001A1

公开(公告)日：2021-09-30

申请号：US16828886

申请日：2020-03-24

Applicant: Applied Materials, Inc.

Inventor： Costel Biloiu ,  Adam Calkins ,  Alexander C. Kontos ,  James J. Howarth

IPC: H01J27/02 ,  H01J37/08 ,  H01J37/317

Abstract: Disclosed herein are approaches for adjusting extraction slits of an extraction plate using a set of adjustable beam blockers. In one approach, an ion extraction optics may include an extraction plate including a first opening and a second opening, and a first beam blocker extending over the first opening and a second beam blocker extending over the second opening. Each of the first and second beam blockers may include an inner slit defined by a first distance between an inner edge and the extraction plate, and an outer slit defined by a second distance between an outer edge and the extraction plate, wherein the first and second beam blockers are movable to vary at least one of the first distance and the second distance. As a result, extraction through the inner and outer slits of ion beamlets characterized by similar mean angles may be achieved.

公开(公告)号：US11984318B2

公开(公告)日：2024-05-14

申请号：US17122323

申请日：2020-12-15

Applicant: Applied Materials, Inc.

Inventor： Shurong Liang ,  Alexander C. Kontos ,  Il-Woong Koo

IPC: H01L21/033 ,  H01L21/04 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/0337 ,  H01L21/0332 ,  H01L21/0475 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/32137

Abstract: A method for patterning structures including providing a layer stack having a plurality of device layers and a hardmask layer disposed in a stacked arrangement, the layer stack having a plurality of trenches formed therein, the trenches extending through the hardmask layer and into at least one of the device layers, the trenches having lateral sidewalls with a first slope relative to a plane perpendicular to upper surfaces of the device layers, and performing a sputter etching process wherein ion beams are directed toward the hardmask layer to etch the hardmask layer and cause etched material from the hardmask layer to be redistributed along the lateral sidewalls of the trenches to provide the lateral sidewalls with a second slope relative to the plane perpendicular to the upper surfaces of the device layers, the second slope less than the first slope.