公开(公告)号：US20240018688A1

公开(公告)日：2024-01-18

申请号：US18074306

申请日：2022-12-02

Applicant: Applied Materials, Inc.

Inventor： Errol Antonio C. SANCHEZ ,  Shu-Kwan LAU ,  Zuoming ZHU ,  Saurabh CHOPRA ,  Abhishek DUBE ,  Chandra MOHAPATRA ,  Alexandros ANASTASOPOULOS ,  Martin Jeffrey SALINAS

IPC: C30B25/14 ,  C23C16/455 ,  H01L21/02 ,  H01L21/67

CPC classification number: C30B25/14 ,  C23C16/45502 ,  H01L21/0262 ,  H01L21/67098

Abstract: The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a chamber body. The chamber body includes a processing volume, a plurality of gas inject passages, and an exhaust port. The apparatus includes one or more upper heat sources positioned above the processing volume, one or more lower heat sources positioned below the processing volume, and a pedestal assembly positioned in the processing volume. The apparatus includes one or more side heat sources positioned outwardly of the processing volume and configured to heat the processing volume through a side of the processing volume. The chamber body can be a dual-chamber body that includes a second processing volume, and the one or more side heat sources can be positioned outwardly of one or more of the processing volume or the second processing volume.

公开(公告)号：US20240247405A1

公开(公告)日：2024-07-25

申请号：US18100978

申请日：2023-01-24

Applicant: Applied Materials, Inc.

Inventor： Alexandros ANASTASOPOULOS ,  Zuoming ZHU ,  Maribel MALDONADO-GARCIA ,  Thomas KIRSCHENHEITER ,  Flora Fong-Song CHANG

IPC: C30B25/22 ,  C30B15/14 ,  C30B25/12 ,  C30B25/16 ,  C30B29/06 ,  C30B29/08

CPC classification number: C30B25/22 ,  C30B15/14 ,  C30B25/12 ,  C30B25/16 ,  C30B29/06 ,  C30B29/08

Abstract: A method for substrate processing includes flowing one or more process reactive gases into an upper volume of a processing chamber, flowing cleaning gas into a lower volume of the processing chamber, measuring temperature of an inner surface of the lower volume of the processing chamber, and adjusting temperature of the inner surface of the lower volume of the processing chamber, based on the measured temperature.