MULTI-FLOW METHODS, AND RELATED APPARATUS, FOR SEMICONDUCTOR MANUFACTURING

    公开(公告)号:US20250149349A1

    公开(公告)日:2025-05-08

    申请号:US18500707

    申请日:2023-11-02

    Abstract: Embodiments of the present disclosure relate to multi-flow methods and related apparatus applicable for semiconductor manufacturing. In one or more embodiments, a method of substrate processing includes flowing a first gas flow into a first set of flow levels of a processing chamber, and flowing a second gas flow into a second set of flow levels of the processing chamber simultaneously with the flowing of the first gas flow. The first set of flow levels and the second set of flow levels alternate with respect to each other. The method includes heating one or more substrates positioned in the processing chamber.

    MULTI-LAYER EPI CHAMBER BODY
    2.
    发明申请

    公开(公告)号:US20250101629A1

    公开(公告)日:2025-03-27

    申请号:US18976591

    申请日:2024-12-11

    Abstract: An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.

    IN-SITU TEMPERATURE MAPPING FOR EPI CHAMBER

    公开(公告)号:US20220090293A1

    公开(公告)日:2022-03-24

    申请号:US17027385

    申请日:2020-09-21

    Abstract: The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.

    INJECTOR FOR SEMICONDUCTOR EPITAXY GROWTH
    6.
    发明申请
    INJECTOR FOR SEMICONDUCTOR EPITAXY GROWTH 审中-公开
    注射器半导体外延增长

    公开(公告)号:US20160362813A1

    公开(公告)日:2016-12-15

    申请号:US15156371

    申请日:2016-05-17

    Abstract: A processing chamber with a top, a bottom, and a sidewall coupled together to define an enclosure, a substrate support having a substrate supporting surface, an energy source coupled to the top or the bottom, and a gas injector liner disposed at the sidewall. The gas injector liner comprises a first plurality of gas outlets disposed at a first height, wherein one or more of the first plurality of gas outlets are oriented upwardly or downwardly, a second plurality of gas outlets disposed at a second height shorter than the first height, wherein one or more of the second plurality of gas outlets are oriented upwardly or downwardly, and a third plurality of gas outlets disposed at a third height shorter than the second height, wherein one or more of the third plurality of gas outlets are oriented upwardly or downwardly with respect to the substrate supporting surface.

    Abstract translation: 一种具有顶部,底部和侧壁的处理室,其联接在一起以限定外壳,具有基板支撑表面的基板支撑件,联接到顶部或底部的能量源以及设置在侧壁处的气体注入器衬套。 气体注入器衬套包括设置在第一高度处的第一多个气体出口,其中第一多个气体出口中的一个或多个朝上或向下取向;第二多个气体出口,其设置在比第一高度短的第二高度处 ,其中所述第二多个气体出口中的一个或多个向上或向下取向,以及设置在比所述第二高度短的第三高度处的第三多个气体出口,其中所述第三多个气体出口中的一个或多个朝向上 或相对于基板支撑表面向下。

    SUSCEPTOR AND PRE-HEAT RING FOR THERMAL PROCESSING OF SUBSTRATES
    8.
    发明申请
    SUSCEPTOR AND PRE-HEAT RING FOR THERMAL PROCESSING OF SUBSTRATES 审中-公开
    用于衬底热处理的SUSCEPTOR和预热环

    公开(公告)号:US20160068996A1

    公开(公告)日:2016-03-10

    申请号:US14826287

    申请日:2015-08-14

    Abstract: Embodiments of the present disclosure provide an improved susceptor for a substrate processing chamber. In one embodiment, the susceptor comprises an outer peripheral edge circumscribing a pocket, wherein the pocket has a concave surface that is recessed from the outer peripheral edge, and an angled support surface disposed between the outer peripheral edge and the pocket, wherein the angled support surface is inclined with respect to a horizontal surface of the outer peripheral edge.

    Abstract translation: 本公开的实施例提供了用于衬底处理室的改进的基座。 在一个实施例中,所述基座包括围绕口袋的外周边缘,其中所述口袋具有从所述外周缘凹陷的凹面,以及设置在所述外周边缘和所述口袋之间的成角度的支撑表面, 表面相对于外周边缘的水平表面倾斜。

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