公开(公告)号：US20240141498A1

公开(公告)日：2024-05-02

申请号：US18085402

申请日：2022-12-20

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Ala MORADIAN ,  Shu-Kwan LAU ,  Manjunath SUBBANNA ,  Errol Antonio C. SANCHEZ ,  Abhishek DUBE ,  Erika R. WARRICK ,  Martin Jeffrey SALINAS ,  Chandra MOHAPATRA

IPC: C23C16/52 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/4481 ,  C23C16/45561

Abstract: The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing volume into a plurality of zones along a first direction of the processing volume and a second direction of the processing volume. The second direction intersects the first direction. The plurality of zones have a first zone number (m), and a second zone number (n). The method includes determining a group number. The determining of the group number includes multiplying a first value by a second value. The first value correlates to a first zone number (m) of a plurality of zones and the second value correlates to a second zone number (n) of the plurality of zones. The method includes grouping the zones into groups having a number that is equal to the group number.

公开(公告)号：US20240018688A1

公开(公告)日：2024-01-18

申请号：US18074306

申请日：2022-12-02

Applicant: Applied Materials, Inc.

Inventor： Errol Antonio C. SANCHEZ ,  Shu-Kwan LAU ,  Zuoming ZHU ,  Saurabh CHOPRA ,  Abhishek DUBE ,  Chandra MOHAPATRA ,  Alexandros ANASTASOPOULOS ,  Martin Jeffrey SALINAS

IPC: C30B25/14 ,  C23C16/455 ,  H01L21/02 ,  H01L21/67

CPC classification number: C30B25/14 ,  C23C16/45502 ,  H01L21/0262 ,  H01L21/67098

Abstract: The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a chamber body. The chamber body includes a processing volume, a plurality of gas inject passages, and an exhaust port. The apparatus includes one or more upper heat sources positioned above the processing volume, one or more lower heat sources positioned below the processing volume, and a pedestal assembly positioned in the processing volume. The apparatus includes one or more side heat sources positioned outwardly of the processing volume and configured to heat the processing volume through a side of the processing volume. The chamber body can be a dual-chamber body that includes a second processing volume, and the one or more side heat sources can be positioned outwardly of one or more of the processing volume or the second processing volume.