中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.016 seconds)

    Coated silicon carbide cermet used in a plasma reactor
    1.
    发明申请
    Coated silicon carbide cermet used in a plasma reactor 审中-公开
    用于等离子体反应器中的涂覆碳化硅金属陶瓷

    公开(公告)号：US20030198749A1

    公开(公告)日：2003-10-23

    申请号：US10125135

    申请日：2002-04-17

    Applicant: Applied Materials, Inc.

    Inventor： Ananda H. Kumar ,  Robert W. Wu ,  Gerald Zheyao Yin ,  Gabriel Bilek

    IPC: C23F001/00 ,  C23C016/00 ,  H01L021/306 ,  B05D003/02

    CPC classification number: C04B41/009 ,  C04B41/4527 ,  C04B41/4531 ,  C04B41/81 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32559 ,  H01J37/32642 ,  C04B41/5058 ,  C04B41/5059 ,  C04B41/5002 ,  C04B41/5001 ,  C04B35/565 ,  C04B35/573

    Abstract: A complexly shaped Si/SiC cermet part including a protective coating deposited on a surface of the cermet part facing the plasma of the reactor. The cermet part is formed by casting a SiC green form and machining the shape into the green form. The green form is incompletely sintered such that it is unconsolidated and shrinks by less than 1% during sintering. Molten silicon is flowed into the voids of the unconsolidated sintered body. Chemical vapor deposition or plasma spraying coats onto the cermet structure a protective film of silicon carbide, boron carbide, diamond, or related carbon-based materials. The part may be configured for use in a plasma reactor, such as a chamber body, showerhead, focus ring, or chamber liner.

    Abstract translation: 复合形状的Si / SiC金属陶瓷部件，其包括沉积在面向反应器的等离子体的金属陶瓷部件的表面上的保护涂层。 金属陶瓷部分通过铸造SiC绿色形状并将形状加工成绿色形状。 绿色形状不完全烧结，使其在烧结过程中未松散并收缩小于1％。 熔融硅流入未固结烧结体的空隙。 化学气相沉积或等离子喷涂涂覆在金属陶瓷结构上，形成碳化硅，碳化硼，金刚石或相关碳基材料的保护膜。 该部件可以被配置为用于等离子体反应器，诸如室主体，喷头，聚焦环或腔室衬套。

    GAS DISTRIBUTION PLATE ELECTRODE FOR A PLASMA REACTOR
    2.
    发明申请
    GAS DISTRIBUTION PLATE ELECTRODE FOR A PLASMA REACTOR 有权
    用于等离子体反应器的气体分布板电极

    公开(公告)号：US20030111961A1

    公开(公告)日：2003-06-19

    申请号：US10027732

    申请日：2001-12-19

    Applicant: Applied Materials, Inc.

    Inventor： Dan Katz ,  Douglas A. Buchberger JR. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    IPC: H01J007/24

    CPC classification number: H01J37/3244

    Abstract: The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

    Abstract translation: 本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管 背板，后板和前板结合在一起并形成组件。 组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径 至少一个孔的流速。 此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的， 与孔对齐。

    Electrostatic chuck with dielectric coating
    3.
    发明申请
    Electrostatic chuck with dielectric coating 审中-公开
    带电介质涂层的静电吸盘

    公开(公告)号：US20030010292A1

    公开(公告)日：2003-01-16

    申请号：US09907328

    申请日：2001-07-16

    Applicant: Applied Materials, Inc.

    Inventor： Arnold V. Kholodenko ,  Michael G. Chafin ,  Brad Mays ,  Tetsuya Ishikawa ,  Ananda H. Kumar ,  Dennis S. Grimard

    IPC: C23F001/00 ,  C23C016/00

    CPC classification number: C23C16/45568 ,  C23C16/4581 ,  C23C16/4586 ,  H01L21/6831 ,  H01L21/6833

    Abstract: Generally, an electrostatic chuck having a dielectric coating is provided. In one embodiment, an electrostatic chuck includes a support surface, a mounting surface disposed opposite the support surface and at least one side separating the support surface and the mounting surface which defines a support body. One or more conductive members are disposed within the support body to generate an electrostatic attraction between the body and a substrate disposed thereon. A dielectric coating is disposed on the mounting surface of the support body to minimize undesired current leakage therethrough. Optionally, the dielectric coating may be additionally disposed on one or more of the sides and/or the support surface.

    Abstract translation: 通常，提供具有电介质涂层的静电卡盘。 在一个实施例中，静电卡盘包括支撑表面，与支撑表面相对设置的安装表面和分开支撑表面和限定支撑体的安装表面的至少一个侧面。 一个或多个导电构件设置在支撑体内，以在主体和其上设置的基板之间产生静电吸引力。 电介质涂层设置在支撑体的安装表面上，以最大限度地减少不必要的电流泄漏。 可选地，电介质涂层可以另外设置在一个或多个侧面和/或支撑表面上。

    GAS DISTRIBUTION PLATE ELECTRODE FOR A PLASMA REACTOR
    5.
    发明申请
    GAS DISTRIBUTION PLATE ELECTRODE FOR A PLASMA REACTOR 有权

    公开(公告)号：US20030201723A1

    公开(公告)日：2003-10-30

    申请号：US10442386

    申请日：2003-05-20

    Applicant: Applied Materials, Inc.

    Inventor： Dan Katz ,  Douglas A. Buchberger JR. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    IPC: H01J007/24

    CPC classification number: H01J37/3244

    Abstract: The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

    Process chamber having a corrosion-resistant wall and method
    9.
    发明申请
    Process chamber having a corrosion-resistant wall and method 失效
    处理室具有耐腐蚀壁和方法

    公开(公告)号：US20030056897A1

    公开(公告)日：2003-03-27

    申请号：US09962626

    申请日：2001-09-24

    Applicant: Applied Materials, Inc.

    Inventor： Shamouil Shamouilian ,  Jennifer Y. Sun ,  Ananda H. Kumar

    IPC: C23F001/00 ,  C23C016/00

    CPC classification number: C04B41/009 ,  C04B41/4842 ,  C04B41/83 ,  H01J37/32467 ,  H01J2237/022 ,  C04B35/00 ,  C04B35/565

    Abstract: A substrate processing chamber has a substrate support, a gas supply, a gas exhaust, a gas energizer, and a wall about the substrate support, the wall having a porous ceramic material at least partially infiltrated with a fluorinated polymer, whereby a substrate on the substrate support may be processed by gas introduced by the gas supply, energized by the gas energizer, and exhausted by the gas exhaust.

    Abstract translation: 衬底处理室具有衬底支撑件，气体供应器，气体排出器，气体激发器和围绕衬底支撑件的壁，所述壁具有至少部分地被氟化聚合物渗透的多孔陶瓷材料，由此， 衬底支撑件可以由气体源引入的气体进行处理，由气体激发器激励并被排气排出。

    Top gas feed lid for semiconductor processing chamber
    10.
    发明申请
    Top gas feed lid for semiconductor processing chamber 审中-公开
    用于半导体处理室的顶部进料盖

    公开(公告)号：US20030037879A1

    公开(公告)日：2003-02-27

    申请号：US09939332

    申请日：2001-08-24

    Applicant: Applied Materials, Inc.

    Inventor： Farahmand E. Askarinam ,  Robert W. Wu ,  Jeremiah T. Pender ,  Gerardo A. Delgadino ,  Hoiman Hung ,  Ananda H. Kumar ,  Olga Regelman ,  Douglas A. Buchberger JR.

    IPC: C23F001/00 ,  C23C016/00 ,  H01L021/306

    CPC classification number: C23C16/4557 ,  C23C16/4411 ,  C23C16/45572 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/67017

    Abstract: Apparatus for gas distribution in a semiconductor wafer processing chamber 200 having a roof 228. The roof 228 has a top surface 608 and a bottom surface 312. A recess 314 is disposed within the bottom surface 312 of the roof 228. A gas distribution plate 316 is disposed within the recess 314 and a material layer coating 320 is disposed upon the bottom surfaces 312/500 of the roof 228 and the gas distribution plate 316. The material layer coating 320 and the gas distribution plate 316 each have a plurality of apertures 322/404. The apertures 404 of the gas distribution plate 316 coincide with the apertures 322 in the material layer coating 320. The material layer coating 320 is formed from silicon carbide and most preferably is deposited by chemical vapor deposition (CVD). Both the roof 228 and gas distribution plate 316 are fabricated from silicon carbide.

    Abstract translation: 在具有屋顶228的半导体晶片处理室200中用于气体分配的装置。屋顶228具有顶表面608和底表面312.凹部314设置在屋顶228的底表面312内。气体分配板316 设置在凹部314内，并且材料层涂层320设置在屋顶228和气体分配板316的底面312/500上。材料层涂层320和气体分配板316各自具有多个孔322 / 404。 气体分配板316的孔404与材料层涂层320中的孔322重合。材料层涂层320由碳化硅形成，最优选通过化学气相沉积（CVD）沉积。 屋顶228和气体分配板316均由碳化硅制成。

Patent Agency Ranking