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    Edge ring lip
    1.
    发明授权
    Edge ring lip 有权
    边缘唇

    公开(公告)号：US08865602B2

    公开(公告)日：2014-10-21

    申请号：US13630291

    申请日：2012-09-28

    Applicant: Applied Materials, Inc.

    Inventor： Joseph M. Ranish ,  Wolfgang R. Aderhold ,  Blake Koelmel ,  Ilya Lavitsky

    IPC: H01L21/00 ,  F26B19/00 ,  F26B3/30 ,  H01L21/687 ,  H01L21/263 ,  H05B3/00 ,  H01L21/324 ,  H01L21/67

    CPC classification number: H01L21/68714 ,  H01L21/2636 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68735 ,  H05B3/0047

    Abstract: Embodiments of the invention generally relate to a support ring to support a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge to support the substrate, and a substrate support formed on a top surface of the edge lip. The substrate support may include multiple projections extending upwardly and perpendicularly from a top surface of the edge lip, or multiple U-shaped clips securable to an edge portion of the edge lip. The substrate support thermally disconnects the substrate from the edge lip to prevent heat loss through the edge lip, resulting in an improved temperature profile across the substrate with a minimum edge temperature gradient.

    Abstract translation: 本发明的实施例一般涉及用于在处理室中支撑衬底的支撑环。 在一个实施例中，支撑环包括内环，通过平坦部分连接到内环的外周边的外环，从内环的内周径向向内延伸的边缘，以形成支撑件 衬底和形成在边缘唇缘的顶表面上的衬底支撑件。 衬底支撑件可以包括从边缘唇缘的上表面向上并垂直延伸的多个突起，或者可固定到边缘唇缘的边缘部分的多个U形夹。 衬底支撑件将衬底与边缘唇缘热断开，以防止通过边缘唇缘的热损失，导致跨越衬底的最小边缘温度梯度的改善的温度分布。

    EDGE RING LIP
    2.
    发明申请
    EDGE RING LIP 有权
    边缘环

    公开(公告)号：US20140094039A1

    公开(公告)日：2014-04-03

    申请号：US13630291

    申请日：2012-09-28

    Applicant: Applied Materials, Inc.

    Inventor： JOSEPH M. RANISH ,  Wolfgang R. Aderhold ,  Blake Koelmel ,  llya Lavitsky

    IPC: H01L21/687 ,  H01L21/263

    CPC classification number: H01L21/68714 ,  H01L21/2636 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68735 ,  H05B3/0047

    Abstract: Embodiments of the invention generally relate to a support ring to support a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge to support the substrate, and a substrate support formed on a top surface of the edge lip. The substrate support may include multiple projections extending upwardly and perpendicularly from a top surface of the edge lip, or multiple U-shaped clips securable to an edge portion of the edge lip. The substrate support thermally disconnects the substrate from the edge lip to prevent heat loss through the edge lip, resulting in an improved temperature profile across the substrate with a minimum edge temperature gradient.

    Abstract translation: 本发明的实施例一般涉及用于在处理室中支撑衬底的支撑环。 在一个实施例中，支撑环包括内环，通过平坦部分连接到内环的外周边的外环，从内环的内周径向向内延伸的边缘，以形成支撑件 衬底和形成在边缘唇缘的顶表面上的衬底支撑件。 衬底支撑件可以包括从边缘唇缘的上表面向上并垂直延伸的多个突起，或者可固定到边缘唇缘的边缘部分的多个U形夹。 衬底支撑件使衬底与边缘唇缘热断开以防止通过边缘唇缘的热损失，导致跨越衬底的最小边缘温度梯度的改善的温度分布。

    Wafer edge measurement and control
    4.
    发明授权
    Wafer edge measurement and control 有权

    公开(公告)号：US10483145B2

    公开(公告)日：2019-11-19

    申请号：US15727105

    申请日：2017-10-06

    Applicant: Applied Materials, Inc.

    Inventor： Blake Koelmel

    IPC: H01L21/68 ,  H01L21/67

    Abstract: Devices and methods are provided for positioning and/or rotating a substrate without solid contact, such as by floating the wafer on a thin layer of gas. Since there is no solid contact with components of a processing chamber, features on the wafer are used to determine wafer position and rotational speed. Closed loop control systems are provided with capacitive sensors to monitor the position of the edge of the wafer in a horizontal plane. Control systems may also monitor the position of a wafer feature as it rotates, such as a notch in the edge of the wafer. Because the presence of a notch can disrupt sensors facing the edge of the wafer, methods and devices to reduce or eliminate this disruption are also provided.

    Wafer edge measurement and control
    6.
    发明授权
    Wafer edge measurement and control 有权

    公开(公告)号：US09786537B2

    公开(公告)日：2017-10-10

    申请号：US13870637

    申请日：2013-04-25

    Applicant: Applied Materials, Inc.

    Inventor： Blake Koelmel

    IPC: H01L21/68 ,  H01L21/67

    CPC classification number: H01L21/681 ,  H01L21/67259

    Abstract: Devices and methods are provided for positioning and/or rotating a substrate without solid contact, such as by floating the wafer on a thin layer of gas. Since there is no solid contact with components of a processing chamber, features on the wafer are used to determine wafer position and rotational speed. Closed loop control systems are provided with capacitive sensors to monitor the position of the edge of the wafer in a horizontal plane. Control systems may also monitor the position of a wafer feature as it rotates, such as a notch in the edge of the wafer. Because the presence of a notch can disrupt sensors facing the edge of the wafer, methods and devices to reduce or eliminate this disruption are also provided.

    Apparatus and method for measuring radiation energy during thermal processing
    7.
    发明授权
    Apparatus and method for measuring radiation energy during thermal processing 有权
    热处理过程中测量辐射能的装置和方法

    公开(公告)号：US08761587B2

    公开(公告)日：2014-06-24

    申请号：US13903387

    申请日：2013-05-28

    Applicant: Applied Materials, Inc.

    Inventor： Joseph M. Ranish ,  Blake Koelmel ,  Aaron Muir Hunter

    IPC: A21B2/00

    CPC classification number: H01L22/10 ,  H01L21/67115 ,  H01L21/67248

    Abstract: Embodiments of the present invention provide apparatus and method for reducing heating source radiation influence in temperature measurement during thermal processing. In one embodiment of the present invention, background radiant energy, such as an energy source of a thermal processing chamber, is marked within a selected spectrum, a characteristic of the background is then determined by measuring radiant energy at a reference wavelength within the selected spectrum and a comparing wavelength just outside the selected spectrum.

    Abstract translation: 本发明的实施例提供了用于在热处理期间减少加热源辐射对温度测量的影响的装置和方法。 在本发明的一个实施例中，将背景辐射能（例如热处理室的能量源）标记在所选择的光谱内，然后通过测量所选光谱内的参考波长的辐射能来确定背景的特性 以及刚好在所选频谱之外的比较波长。

    WAFER EDGE MEASUREMENT AND CONTROL
    8.
    发明申请
    WAFER EDGE MEASUREMENT AND CONTROL 有权
    WAFER边缘测量和控制

    公开(公告)号：US20130287536A1

    公开(公告)日：2013-10-31

    申请号：US13870637

    申请日：2013-04-25

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Blake Koelmel

    IPC: H01L21/68

    CPC classification number: H01L21/681 ,  H01L21/67259

    Abstract: Devices and methods are provided for positioning and/or rotating a substrate without solid contact, such as by floating the wafer on a thin layer of gas. Since there is no solid contact with components of a processing chamber, features on the wafer are used to determine wafer position and rotational speed. Closed loop control systems are provided with capacitive sensors to monitor the position of the edge of the wafer in a horizontal plane. Control systems may also monitor the position of a wafer feature as it rotates, such as a notch in the edge of the wafer. Because the presence of a notch can disrupt sensors facing the edge of the wafer, methods and devices to reduce or eliminate this disruption are also provided.

    Abstract translation: 提供了用于定位和/或旋转衬底而没有固体接触的装置和方法，例如通过将晶片浮在薄层气体上。 由于与处理室的部件没有固体接触，所以使用晶片上的特征来确定晶片位置和转速。 闭环控制系统设置有电容传感器，以在水平面内监测晶片边缘的位置。 控制系统还可以监视晶片特征在其旋转时的位置，例如晶片边缘中的凹口。 由于存在凹口可能会破坏面向晶片边缘的传感器，因此还提供了减少或消除此破坏的方法和设备。

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