公开(公告)号：US20230360967A1

公开(公告)日：2023-11-09

申请号：US17739856

申请日：2022-05-09

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Susmit Singha Roy ,  Supriya Ghosh ,  John Sudijono ,  Abhijit Basu Mallick ,  Jiecong Tang

IPC: H01L21/768 ,  H01L27/11556 ,  H01L27/11582

CPC classification number: H01L21/76843 ,  H01L21/76877 ,  H01L27/11556 ,  H01L27/11582

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.

公开(公告)号：US20230207314A1

公开(公告)日：2023-06-29

申请号：US17562441

申请日：2021-12-27

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  Supriya Ghosh ,  Jiecong Tang ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC: H01L21/02

CPC classification number: H01L21/02565 ,  H01L21/02614

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.

公开(公告)号：US20240332028A1

公开(公告)日：2024-10-03

申请号：US18192549

申请日：2023-03-29

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/3105 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31051 ,  H01J37/32816 ,  H01L21/02164 ,  H01L21/02271 ,  H01J2237/336

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the semiconductor processing chamber. The methods may include forming a silicon-containing material on the substrate. The silicon-containing material may be characterized by a stress of greater than or about −200 MPa. The methods may include annealing the substrate at a temperature of greater than or about 700° C.

公开(公告)号：US20230090280A1

公开(公告)日：2023-03-23

申请号：US17483273

申请日：2021-09-23

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311

Abstract: Exemplary semiconductor processing methods may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may include a low dielectric constant material defining one or more features, a liner extending across the low dielectric constant material and within the one or more features, and a metal-containing layer deposited on the liner and extending within the one or more features. The methods may include forming a layer of material on at least a portion of the liner and the metal-containing layer. The layer of material may include graphene. The methods may include removing substantially all of the portion of the layer of material on the liner.

公开(公告)号：US20250066913A1

公开(公告)日：2025-02-27

申请号：US18455508

申请日：2023-08-24

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Diwakar Kedlaya ,  Priya Chouhan

IPC: C23C16/455 ,  C23C16/40 ,  H01J37/32 ,  H01L21/02

Abstract: Methods of filling a feature on a semiconductor substrate may include performing a process to fill the feature on the semiconductor substrate by repeatedly performing first operations. First operations can include providing a silicon-containing precursor. First operations can include contacting the substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the substrate. First operations can include purging the semiconductor processing chamber. First operations can include providing an oxygen-and-hydrogen-containing precursor. First operations can include contacting the substrate with the oxygen-and-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the substrate.

公开(公告)号：US20240420934A1

公开(公告)日：2024-12-19

申请号：US18209711

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Soman ,  Yanze Wu ,  Zeqing Shen ,  Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Siyao Wang ,  Keith Tatseun Wong ,  Lakmal C. Kalutarage

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311

Abstract: Exemplary methods of semiconductor processing may include methods for nonconformally building up silicon-and-oxygen-containing material where the top of the feature preferentially fills at a slower rate as compared to the bottom of the feature. Such methods may include iterative nonconformal etching operations and/or iterative nonconformal inhibition operations. For example, after building up a layer comprising silicon-and-oxygen-containing material, the layer may be nonconformally etched before building up another layer comprising silicon-and-oxygen-containing material. In another example, in the building up of the layer, an inhibitor may be introduced preferentially at and near the top of the features to provide nonconformal buildup of the silicon-and-oxygen-containing material.

公开(公告)号：US20240420952A1

公开(公告)日：2024-12-19

申请号：US18209700

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Soman ,  Supriya Ghosh ,  Yanze Wu ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/321

Abstract: Exemplary methods of semiconductor processing may include iteratively repeating a deposition cycle several times on a substrate disposed within a processing region of a semiconductor processing chamber. Each deposition cycle may include depositing a silicon-containing material on the substrate and exposing the silicon-containing material to a first oxygen plasma to convert the silicon-containing material to a silicon-and-oxygen-containing material. After the iterative repeating of the deposition cycle, the method may include performing a densification operation by exposing the silicon-and-oxygen-containing material to a second oxygen plasma to produce a densified silicon-and-oxygen-containing material where the quality of the densified silicon-and-oxygen-containing material is greater than the silicon-and-oxygen-containing material. The method may further include iteratively repeating the iteratively repeated deposition cycles and the densification operation several times.

公开(公告)号：US20230360924A1

公开(公告)日：2023-11-09

申请号：US17737311

申请日：2022-05-05

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Shuchi Sunil Ojha ,  Praket Prakash Jha ,  Rui Cheng

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/32844 ,  H01J37/32522 ,  H01J37/32449 ,  H01L21/02115 ,  H01J2237/332 ,  H01J2237/2001 ,  H01J2237/182 ,  H01J2237/334

Abstract: Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.

公开(公告)号：US20230360903A1

公开(公告)日：2023-11-09

申请号：US17737340

申请日：2022-05-05

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02

CPC classification number: H01L21/02123 ,  H01L21/02211 ,  H01L21/02345 ,  H01L21/0234

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more features along the substrate. The methods may include providing an oxygen-containing precursor. The methods may include annealing the silicon-containing material with the oxygen-containing precursor. The annealing may cause the silicon-containing material to expand within the one or more features. The methods may include repeating one or more of the operations to iteratively fill the one or more features on the substrate.