公开(公告)号：US09601301B2

公开(公告)日：2017-03-21

申请号：US14283159

申请日：2014-05-20

Applicant: Applied Materials, Inc.

Inventor： Sergey G. Belostotskiy ,  Chinh Dinh ,  Andrew Nguyen ,  Michael G. Chafin

IPC: H01J37/32 ,  H01J37/00 ,  H01L21/683

CPC classification number: H01J37/00 ,  H01J37/32715 ,  H01J37/32935 ,  H01L21/6833

Abstract: A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.

公开(公告)号：US20130277339A1

公开(公告)日：2013-10-24

申请号：US13632306

申请日：2012-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Michael D. Willwerth ,  David Palagashvili ,  Michael G. Chafin ,  Ying-Sheng Lin

IPC: B23K10/00

CPC classification number: H01J37/321 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32724

Abstract: Undesirable heating of a semiconductor process ring is prevented by thermally isolating the process ring from the insulating puck of an electrostatic chuck, and providing a thermally conductive and electrically insulating thermal ring contacting both the semiconductor process ring and an underlying metal base having internal coolant flow passages.

Abstract translation: 通过将工艺环与静电卡盘的绝缘圆盘热隔离，并且提供与半导体工艺环和下面的金属基座接触的导热和电绝缘的热环来防止半导体工艺环的不希望的加热，其具有内部冷却剂流动通道 。

公开(公告)号：US11447868B2

公开(公告)日：2022-09-20

申请号：US15606739

申请日：2017-05-26

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Michael G. Chafin ,  Yang Yang ,  Anilkumar Rayaroth ,  Lu Liu

IPC: C23C16/46 ,  C23C16/458 ,  C23C16/48 ,  H01J37/32

Abstract: Embodiments of the disclosure relate to apparatus and method for a tunable plasma process within a plasma processing chamber. In one embodiment of the disclosure, a heater assembly for a plasma processing chamber is disclosed. The heater assembly includes a resistive heating element, a first lead coupling the resistive heating element to an RF filter and a tunable circuit element operable to adjust an impedance between the resistive heating element and the RF filter. Another embodiment provides a method for controlling a plasma process in a plasma processing chamber by forming a plasma from a process gas present inside the plasma processing chamber and adjusting an impedance between a resistive heating element and an RF filter coupled between the resistive heating element and a power source for the resistive heating element, while the plasma is present in the plasma processing chamber.

公开(公告)号：US10546731B1

公开(公告)日：2020-01-28

申请号：US16153650

申请日：2018-10-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Haitao Wang ,  Michael G. Chafin ,  Kartik Ramaswamy ,  Yue Guo ,  Valentin Todorow ,  Kenny Doan ,  Sergio F. Shoji ,  Brad L. Mays ,  Usama Dadu

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67 ,  H01L21/66

Abstract: A method, apparatus and system for dechucking a processing object from a surface of an electrostatic chuck (ESC) in a processing chamber can include applying to the ESC for a first time interval, a first dechuck voltage having a substantially equal magnitude and opposite polarity of a chuck voltage chucking the processing object to the surface of the ESC, selecting a second dechuck voltage having an opposite polarity as the first dechuck voltage, linearly sweeping the ESC voltage from the first dechuck voltage to the second dechuck voltage over a second time interval, monitoring the ESC current during the second time interval until a current spike in the ESC current above a threshold is detected, communicating a command to move support pins up to remove the processing object from the ESC surface, and maintaining the second dechuck voltage until the processing object is separated from the surface of the ESC.

公开(公告)号：US09070536B2

公开(公告)日：2015-06-30

申请号：US13632306

申请日：2012-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Michael D. Willwerth ,  David Palagashvili ,  Michael G. Chafin ,  Ying-Sheng Lin

IPC: B23K9/02 ,  H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32724

Abstract: Undesirable heating of a semiconductor process ring is prevented by thermally isolating the process ring from the insulating puck of an electrostatic chuck, and providing a thermally conductive and electrically insulating thermal ring contacting both the semiconductor process ring and an underlying metal base having internal coolant flow passages.

Abstract translation: 通过将工艺环与静电卡盘的绝缘圆盘热隔离，并且提供与半导体工艺环和下面的金属基座接触的导热和电绝缘的热环来防止半导体工艺环的不希望的加热，其具有内部冷却剂流动通道 。