公开(公告)号：US20240363723A1

公开(公告)日：2024-10-31

申请号：US18140850

申请日：2023-04-28

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Tengzhou Ma ,  Geetika Bajaj ,  Debaditya Chatterjee ,  Hsin-Jung Yu ,  Pei Hsuan Lin ,  Yixiong Yang

IPC: H01L29/51 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/40

CPC classification number: H01L29/513 ,  H01L21/82385 ,  H01L21/823857 ,  H01L27/092 ,  H01L29/401 ,  H01L29/517

Abstract: Methods of manufacturing electronic devices are described. Embodiments of the present disclosure advantageously provide methods of manufacturing electronic devices that meet reduced thickness, reduced leakage, lower thermal budget, and Vt requirements (including multi-Vt), and have improved device performance and reliability. The method comprises forming a P-dipole stack and an N-dipole stack on a semiconductor substrate by: depositing an interfacial layer (e.g., silicon oxide (SiOx)) on the top surface of the channel; depositing a hafnium-containing layer comprising hafnium oxide (HfOx) and having a thickness of less than or equal to 5 Å on the interfacial layer; and depositing a dipole layer comprising lanthanum nitride (LaN) on the hafnium-containing layer.

公开(公告)号：US20250126867A1

公开(公告)日：2025-04-17

申请号：US18379928

申请日：2023-10-13

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Yixiong Yang ,  Seshadri Ganguli ,  Geetika Bajaj ,  Debaditya Chatterjee ,  Hsin-Jung Yu ,  Tuerxun Ailihumaer ,  Tengzhou Ma ,  Lin Sun

IPC: H01L29/40 ,  H01L21/324 ,  H01L29/49 ,  H01L29/51

Abstract: Methods of scaling the thickness of the interfacial layer in electronic devices, such as NMOS transistors and PMOS transistors are described. Some embodiments provide a metal film or a metal nitride film that reduces the thickness of the interfacial layer by scavenging unbound oxygen from the interfacial layer (e.g., silicon oxide (SiOx)) and the high-κ dielectric layer (e.g., hafnium oxide (HfOx)). Some embodiments advantageously include annealing the semiconductor substrate to promote or accelerate the scavenging.

公开(公告)号：US20240360557A1

公开(公告)日：2024-10-31

申请号：US18139121

申请日：2023-04-25

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Yixiong Yang ,  Tianyi Huang ,  Geetika Bajaj ,  Hsin-Jung Yu ,  Tengzhou Ma ,  Seshadri Ganguli ,  Tuerxun Ailihumaer ,  Yogesh Sharma ,  Debaditya Chatterjee

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/08 ,  C23C16/18

Abstract: Methods for depositing metal films using a metal halide and metal organic precursors are described. The substrate is exposed to a first metal precursor and a second metal precursor to form the metal film. The exposures can be sequential or simultaneous. The metal films are relatively pure with a low carbon content.