公开(公告)号：US20180187305A1

公开(公告)日：2018-07-05

申请号：US15859035

申请日：2017-12-29

Applicant: Applied Materials, Inc.

Inventor： Lara HAWRYLCHAK ,  Agus Sofian TJANDRA ,  Emre CUVALCI

IPC: C23C16/455

CPC classification number: C23C16/4557 ,  C23C16/45587 ,  C23C16/4584

Abstract: A gas injection apparatus for a thermal processing chamber includes a gas injector having an inlet at a first end and a port at a second end; and a plate having a first opening matching the port, one or more second openings, and at least one circuitous flow path defined by the plate and fluidly connecting the first opening to the one or more second openings.

公开(公告)号：US20160010206A1

公开(公告)日：2016-01-14

申请号：US14794355

申请日：2015-07-08

Applicant: Applied Materials, Inc.

Inventor： Agus Sofian TJANDRA ,  Christopher S. OLSEN ,  Emre CUVALCI ,  Lara HAWRYLCHAK

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52

CPC classification number: C23C16/40 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/46

Abstract: Embodiments disclosed herein generally include a method for forming an oxide layer having improved thickness uniformity on a substrate. The method includes heating a substrate disposed in a processing chamber to a temperature less than about 700 degrees Celsius, flowing a first gas mixture into the processing chamber from a first gas inlet, and flowing a second gas mixture into the processing chamber from a second gas inlet. The composition and flow rate of the second gas mixture, and the composition and flow rate of the first gas mixture are controlled so the oxide layer formed on the substrate has improved thickness uniformity.

Abstract translation: 本文公开的实施方案通常包括用于形成在衬底上具有改善的厚度均匀性的氧化物层的方法。 该方法包括将设置在处理室中的基板加热至低于约700摄氏度的温度，将第一气体混合物从第一气体入口流入处理室，并将第二气体混合物从第二气体流入处理室 进口。 控制第二气体混合物的组成和流速以及第一气体混合物的组成和流速，使得在基板上形成的氧化物层具有改善的厚度均匀性。

公开(公告)号：US20210040612A1

公开(公告)日：2021-02-11

申请号：US16907870

申请日：2020-06-22

Applicant: Applied Materials, Inc.

Inventor： Lara HAWRYLCHAK ,  Agus Sofian TJANDRA ,  Emre CUVALCI

IPC: C23C16/455 ,  C23C16/458

Abstract: A gas injection apparatus for a thermal processing chamber includes a gas injector having an inlet at a first end and a port at a second end; and a plate having a first opening matching the port, one or more second openings, and at least one circuitous flow path defined by the plate and fluidly connecting the first opening to the one or more second openings.

公开(公告)号：US20180269083A1

公开(公告)日：2018-09-20

申请号：US15921819

申请日：2018-03-15

Applicant: Applied Materials, Inc.

Inventor： Lara HAWRYLCHAK ,  Chaitanya A. PRASAD ,  Emre CUVALCI

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/324

CPC classification number: H01L21/67098 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68735 ,  H01L21/68792

Abstract: Embodiments described herein generally relate to a processing apparatus having a cover piece that participates in preheating a process gas. In one implementation, the cover piece includes an annulus. The annulus has an inner wall with a first height, an outer wall with a second height, and a top surface. The second height is greater than the first height. The cover piece also includes an inner lip disposed adjacent the inner wall, and a plurality of fins disposed on the top surface of the annulus. The cover piece and the plurality of fins are an opaque quartz material. The cover piece provides for more efficient heating of process gases, is composed of a material capable of withstanding process conditions while providing for more efficient and uniform processing, and has a low CTE reducing particle contamination due to excessive expansion during processing.