公开(公告)号：US20190385844A1

公开(公告)日：2019-12-19

申请号：US16444865

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer VATS ,  Hang YU ,  Deenesh PADHI ,  Changling LI ,  Gregory M. AMICO ,  Sanjay G. KAMATH

IPC: H01L21/02 ,  H01L21/3065

Abstract: Embodiments of the present disclosure relate to methods for in-situ deposition and treatment of a thin film for improved step coverage. In one embodiment, the method for processing a substrate is provided. The method includes forming a dielectric layer on patterned features of the substrate by exposing the substrate to a gas mixture of a first precursor and a second precursor simultaneously with plasma present in a process chamber, wherein the plasma is formed by a first pulsed RF power, exposing the dielectric layer to a first plasma treatment using a gas mixture of nitrogen and helium in the process chamber, and performing a plasma etch process by exposing the dielectric layer to a plasma formed from a gas mixture of a fluorine-containing precursor and a carrier gas, wherein the plasma is formed in the process chamber by a second pulsed RF power.