公开(公告)号：US20180023193A1

公开(公告)日：2018-01-25

申请号：US15654436

申请日：2017-07-19

Applicant: Applied Materials, Inc.

Inventor： Sanjeev BALUJA ,  Kalyanjit GHOSH ,  Ren-Guan DUAN ,  Mayur G. KULKARNI ,  Gregory SIU ,  Praket P. JHA ,  Deenesh PADHI ,  Lei GUO ,  Wei Min CHAN ,  Ajit BALAKRISHNA

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/4408 ,  C23C16/45519 ,  H01J37/00

Abstract: Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.