公开(公告)号：US10857625B2

公开(公告)日：2020-12-08

申请号：US16532011

申请日：2019-08-05

Applicant: Applied Materials, Inc.

Inventor： Gang Peng ,  David W. Groechel ,  Jenn C. Chow ,  Tuochuan Huang ,  Han Wang

IPC: B23K26/352 ,  H01J37/32 ,  B23K26/12

Abstract: A system to provide a texture to a surface of a component for use in a semiconductor processing chamber is provided. The system includes an enclosure comprising a processing region, a support disposed in the processing region, a photon light source to generate a stream of photons, an optical module operably coupled to the photon light source, and a lens. The optical module includes a beam modulator to create a beam of photons from the stream of photons generated from the photon light source, and a beam scanner to scan the beam of photons across the surface of the component. The lens is used to receive the beam of photons from the beam scanner and distribute the beam of photons at a wavelength in a range between about 345 nm and about 1100 nm across the surface of the component to form a plurality of features on the component.

公开(公告)号：US20240266185A1

公开(公告)日：2024-08-08

申请号：US18106697

申请日：2023-02-07

Applicant: Applied Materials, Inc.

Inventor： Han Wang ,  Yu Yang ,  Jing Zhang ,  Aykut Aydin ,  Guoqing Li ,  Guangyan Zhong ,  Rui Cheng ,  Gene H. Lee ,  Srinivas Guggilla ,  Sinae Heo ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  Karthik Janakiraman

IPC: H01L21/311 ,  H01L21/033

CPC classification number: H01L21/31144 ,  H01L21/0332

Abstract: Exemplary semiconductor processing methods may include depositing a metal-doped boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The metal-doped boron-containing material may include a metal dopant comprising tungsten. The substrate may include a silicon-containing material. The methods may include depositing one or more additional materials over the metal-doped boron-containing material. The one or more additional materials may include a patterned photoresist material. The methods may include transferring a pattern from the patterned photoresist material to the metal-doped boron-containing material. The methods may include etching the metal-doped boron-containing material with a chlorine-containing precursor. The methods may include etching the silicon-containing material with a fluorine-containing precursor. The metal dopant may enhance an etch rate of the silicon-containing material. The methods may include removing the metal-doped boron-containing material from the substrate with a halogen-containing precursor.

公开(公告)号：US20230395391A1

公开(公告)日：2023-12-07

申请号：US18206218

申请日：2023-06-06

Applicant: Applied Materials, Inc.

Inventor： Han Wang ,  Gene H. Lee ,  Yu Yang ,  Jing Zhang

IPC: H01L21/311

CPC classification number: H01L21/31144 ,  H01L28/40 ,  H01L21/31122

Abstract: Methods of forming electronic devices and film stacks comprising depositing a ruthenium carbide hard mask on a capacitor mold formed on a substrate. A hard mask oxide and patterned photoresist are formed, and the pattern of the patterned photoresist are transferred into the ruthenium carbide hard mask. Film stacks comprising the ruthenium carbide hard mask on the capacitor mold are also described.

公开(公告)号：US11519071B2

公开(公告)日：2022-12-06

申请号：US16778642

申请日：2020-01-31

Applicant: Applied Materials, Inc.

Inventor： Gang Grant Peng ,  David W. Groechel ,  Han Wang

IPC: C23C16/00 ,  C23C16/56 ,  H01J37/34 ,  C23C16/40 ,  H01J37/32

Abstract: One example of the disclosure provides a method of fabricating a chamber component with a coating comprising a yttrium containing material with desired film properties. In one example, the method of fabricating a coating material includes providing a base structure comprising an aluminum containing material. The method further includes forming a coating layer that includes a yttrium containing material on the base structure. The method also includes thermal treating the coating layer to form a treated coating layer.

公开(公告)号：US10434604B2

公开(公告)日：2019-10-08

申请号：US15955503

申请日：2018-04-17

Applicant: Applied Materials, Inc.

Inventor： Gang Peng ,  David W. Groechel ,  Jenn C. Chow ,  Tuochuan Huang ,  Han Wang

IPC: B23K26/352 ,  H01J37/32 ,  B23K26/12

Abstract: A system to provide a texture to a surface of a component for use in a semiconductor processing chamber is provided. The system includes an enclosure comprising a processing region, a support disposed in the processing region, a photon light source to generate a stream of photons, an optical module operably coupled to the photon light source, and a lens. The optical module includes a beam modulator to create a beam of photons from the stream of photons generated from the photon light source, and a beam scanner to scan the beam of photons across the surface of the component. The lens is used to receive the beam of photons from the beam scanner and distribute the beam of photons at a wavelength in a range between about 345 nm and about 1100 nm across the surface of the component to form a plurality of features on the component.

公开(公告)号：US20250095990A1

公开(公告)日：2025-03-20

申请号：US18817646

申请日：2024-08-28

Applicant: Applied Materials, Inc.

Inventor： Han Wang ,  Jiaheng Yu ,  Gene H. Lee

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

Abstract: Exemplary semiconductor processing methods may include providing a boron-and-halogen-containing precursor and an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of metal-containing hardmask material may be disposed on the substrate. A layer of silicon-containing material may be disposed on the layer of metal-containing hardmask material. The methods may include forming plasma effluents of the boron-and-halogen-containing precursor and the oxygen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the boron-and-halogen-containing precursor and the oxygen-containing precursor. The contacting may etch a feature in the layer of metal-containing hardmask material. The contacting may form a layer of passivation material on sidewalls of the feature in the layer of metal-containing hardmask material.

公开(公告)号：US20240017299A1

公开(公告)日：2024-01-18

申请号：US17862998

申请日：2022-07-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Tuochuan Huang ,  Min Shen ,  Kenneth Chien ,  Han Wang ,  Stayce Parmer ,  Rynn Wang

IPC: B08B3/08 ,  B08B1/00 ,  B08B3/02 ,  B08B7/00 ,  B08B7/04 ,  B24B37/04

CPC classification number: B08B3/08 ,  B08B1/001 ,  B08B3/02 ,  B08B7/0071 ,  B08B7/04 ,  B24B37/044

Abstract: Described herein is a method for removing deposits off a surface of a chamber component. The method includes receiving a chamber component, and fixing the chamber component in a fixture. A slurry is then applied to a surface of the chamber component, where the slurry has a pH of about 5 to about 9. The surface is then polished using a polish pad and the slurry. The surface roughness of the surface after polishing is within about 10% of the surface roughness before polishing, and wherein deposits on the surface of the chamber component are removed by polishing. An alternative method for removing deposits is also presented, wherein the chamber component is heated to a temperature of about 500° C. to about 1500° C.