公开(公告)号：US20240266185A1

公开(公告)日：2024-08-08

申请号：US18106697

申请日：2023-02-07

Applicant: Applied Materials, Inc.

Inventor： Han Wang ,  Yu Yang ,  Jing Zhang ,  Aykut Aydin ,  Guoqing Li ,  Guangyan Zhong ,  Rui Cheng ,  Gene H. Lee ,  Srinivas Guggilla ,  Sinae Heo ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  Karthik Janakiraman

IPC: H01L21/311 ,  H01L21/033

CPC classification number: H01L21/31144 ,  H01L21/0332

Abstract: Exemplary semiconductor processing methods may include depositing a metal-doped boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The metal-doped boron-containing material may include a metal dopant comprising tungsten. The substrate may include a silicon-containing material. The methods may include depositing one or more additional materials over the metal-doped boron-containing material. The one or more additional materials may include a patterned photoresist material. The methods may include transferring a pattern from the patterned photoresist material to the metal-doped boron-containing material. The methods may include etching the metal-doped boron-containing material with a chlorine-containing precursor. The methods may include etching the silicon-containing material with a fluorine-containing precursor. The metal dopant may enhance an etch rate of the silicon-containing material. The methods may include removing the metal-doped boron-containing material from the substrate with a halogen-containing precursor.

公开(公告)号：US20230340661A1

公开(公告)日：2023-10-26

申请号：US18216138

申请日：2023-06-29

Applicant: Applied Materials, Inc

Inventor： Rui Cheng ,  Guoqing Li ,  Qinghua Zhao

IPC: C23C16/04 ,  H01L21/02 ,  C23C16/32 ,  H01J37/32

CPC classification number: C23C16/045 ,  H01L21/0228 ,  H01L21/02274 ,  C23C16/32 ,  H01J37/32082 ,  H01J2237/3321 ,  H01J2237/334

Abstract: Methods for forming a metal carbide liner in features formed in a substrate surface are described. Each of the features extends a distance into the substrate from the substrate surface and have a bottom and at least one sidewall. The methods include depositing a metal carbide liner in the feature of the substrate surface with a plurality of high-frequency ratio-frequency (HFRF) pulses. Semiconductor devices with the metal carbide liner and methods for filling gaps using the metal carbide liner are also described.

公开(公告)号：US20240387174A1

公开(公告)日：2024-11-21

申请号：US18197528

申请日：2023-05-15

Applicant: Applied Materials, Inc.

Inventor： Guangyan Zhong ,  Eswaranand Venkatasubramanian ,  Rui Cheng ,  Santhosh Kiran Rajarajan ,  Ganesh Balasubramanian ,  Abhijit Basu Mallick ,  Karthik Janakiraman ,  Guoqing Li

IPC: H01L21/033

Abstract: Exemplary methods of semiconductor processing may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-and-halogen-containing precursor and a metal-containing precursor. A substrate may be housed within the processing region. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-metal-containing material on the substrate.

公开(公告)号：US20240332003A1

公开(公告)日：2024-10-03

申请号：US18128049

申请日：2023-03-29

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Guoqing Li ,  Rui Cheng

IPC: H01L21/02 ,  C23C16/14 ,  H01J37/32

CPC classification number: H01L21/02175 ,  C23C16/14 ,  H01J37/32146 ,  H01J37/32155 ,  H01J2237/332

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber, the deposition precursors may be or include a tungsten-containing precursor. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the one or more deposition precursors in the processing region. The plasma may be at least partially formed by an RF power operating at less than or about 3,000 W and at a pulsing frequency less than or about 100,000 Hz. The methods may include forming a layer of material on the substrate. The layer of material may be or include a tungsten-containing material.