公开(公告)号：US20220068630A1

公开(公告)日：2022-03-03

申请号：US17009002

申请日：2020-09-01

Applicant: Applied Materials, Inc.

Inventor： Chuanxi Yang ,  Hang Yu ,  Yu Yang ,  Chuan Ying Wang ,  Allison Yau ,  Xinhai Han ,  Sanjay G. Kamath ,  Deenesh Padhi

IPC: H01L21/02 ,  C23C16/34

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

公开(公告)号：US20230395391A1

公开(公告)日：2023-12-07

申请号：US18206218

申请日：2023-06-06

Applicant: Applied Materials, Inc.

Inventor： Han Wang ,  Gene H. Lee ,  Yu Yang ,  Jing Zhang

IPC: H01L21/311

CPC classification number: H01L21/31144 ,  H01L28/40 ,  H01L21/31122

Abstract: Methods of forming electronic devices and film stacks comprising depositing a ruthenium carbide hard mask on a capacitor mold formed on a substrate. A hard mask oxide and patterned photoresist are formed, and the pattern of the patterned photoresist are transferred into the ruthenium carbide hard mask. Film stacks comprising the ruthenium carbide hard mask on the capacitor mold are also described.

公开(公告)号：US20240266185A1

公开(公告)日：2024-08-08

申请号：US18106697

申请日：2023-02-07

Applicant: Applied Materials, Inc.

Inventor： Han Wang ,  Yu Yang ,  Jing Zhang ,  Aykut Aydin ,  Guoqing Li ,  Guangyan Zhong ,  Rui Cheng ,  Gene H. Lee ,  Srinivas Guggilla ,  Sinae Heo ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  Karthik Janakiraman

IPC: H01L21/311 ,  H01L21/033

CPC classification number: H01L21/31144 ,  H01L21/0332

Abstract: Exemplary semiconductor processing methods may include depositing a metal-doped boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The metal-doped boron-containing material may include a metal dopant comprising tungsten. The substrate may include a silicon-containing material. The methods may include depositing one or more additional materials over the metal-doped boron-containing material. The one or more additional materials may include a patterned photoresist material. The methods may include transferring a pattern from the patterned photoresist material to the metal-doped boron-containing material. The methods may include etching the metal-doped boron-containing material with a chlorine-containing precursor. The methods may include etching the silicon-containing material with a fluorine-containing precursor. The metal dopant may enhance an etch rate of the silicon-containing material. The methods may include removing the metal-doped boron-containing material from the substrate with a halogen-containing precursor.

公开(公告)号：US11538677B2

公开(公告)日：2022-12-27

申请号：US17009002

申请日：2020-09-01

Applicant: Applied Materials, Inc.

Inventor： Chuanxi Yang ,  Hang Yu ,  Yu Yang ,  Chuan Ying Wang ,  Allison Yau ,  Xinhai Han ,  Sanjay G. Kamath ,  Deenesh Padhi

IPC: H01L21/02 ,  C23C16/34

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.