公开(公告)号：US20250062131A1

公开(公告)日：2025-02-20

申请号：US18234685

申请日：2023-08-16

Applicant: Applied Materials, Inc.

Inventor： Hanbyul Jin ,  Sangjun Park ,  Menghui Li ,  Xiawan Yang ,  Sunil Srinivasan ,  Meishen Liu ,  Andrew Butler ,  Qian Fu

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

Abstract: Methods of semiconductor processing may include forming plasma effluents of a plurality of precursors (e.g., an etchant precursor, an oxygen-containing precursor, and a silicon-and-fluorine-containing precursor like silicon tetrafluoride). The plasma effluents may then contact a silicon-containing material and a mask material on a substrate in a processing region of a semiconductor processing chamber. The mask material may have one or more apertures therein that allow the plasma effluents access to the silicon-containing material. Contacting the silicon-containing material and the mask material with the plasma effluents may cause (i) etching the silicon-containing material with the plasma effluents to form and/or deepen one or more features in the silicon-containing material and (ii) simultaneously etching the mask material and depositing a silicon-and-oxygen-containing material on the mask material with the plasma effluents.