公开(公告)号：US20220384189A1

公开(公告)日：2022-12-01

申请号：US17330013

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Siyu Zhu ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Yeonju Kwak ,  Jeong Hwan Kim ,  Qian Fu ,  Xiawan Yang

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/34 ,  C23C16/50 ,  C23C16/458 ,  C23C16/04

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20150099314A1

公开(公告)日：2015-04-09

申请号：US14064914

申请日：2013-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Gaurav Saraf ,  Xiawan Yang ,  Farid Abooameri ,  Wen Teh Chang ,  Anisul H. Khan ,  Bradley Scott Hersch

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/00 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32889 ,  H01J37/32935 ,  H01L21/67155 ,  H01L21/67253

Abstract: Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset Δα in tilt angle α between the non-uniformity functions of the two plasma reactors is detected. The two reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset Δα.

Abstract translation: 对于RF源施加器相对于工件的连续的硬件倾斜角预测蚀刻速率分布不均匀性，并且该行为被建模为至少两个等离子体反应器中的每一个的非均匀性函数。 检测两个等离子体反应器的非均匀性函数之间的倾斜角α的偏移＆Dgr;α。 然后通过在等于偏移＆Dgr;α的倾斜角执行其中一个中的硬件倾斜来匹配两个反应器。

公开(公告)号：US09184021B2

公开(公告)日：2015-11-10

申请号：US14064914

申请日：2013-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Gaurav Saraf ,  Xiawan Yang ,  Farid Abooameri ,  Wen Teh Chang ,  Anisul H. Khan ,  Bradley Scott Hersch

IPC: B44C1/22 ,  H01J37/00 ,  H01L21/67

CPC classification number: H01J37/00 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32889 ,  H01J37/32935 ,  H01L21/67155 ,  H01L21/67253

Abstract: Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset Δα in tilt angle α between the non-uniformity functions of the two plasma reactors is detected. The two reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset Δα.

Abstract translation: 对于RF源施加器相对于工件的连续的硬件倾斜角预测蚀刻速率分布不均匀性，并且该行为被建模为至少两个等离子体反应器中的每一个的非均匀性函数。 检测两个等离子体反应器的非均匀性函数之间的倾斜角α的偏移＆Dgr;α。 然后通过在等于偏移＆Dgr;α的倾斜角执行其中一个中的硬件倾斜来匹配两个反应器。

公开(公告)号：US20250062131A1

公开(公告)日：2025-02-20

申请号：US18234685

申请日：2023-08-16

Applicant: Applied Materials, Inc.

Inventor： Hanbyul Jin ,  Sangjun Park ,  Menghui Li ,  Xiawan Yang ,  Sunil Srinivasan ,  Meishen Liu ,  Andrew Butler ,  Qian Fu

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

Abstract: Methods of semiconductor processing may include forming plasma effluents of a plurality of precursors (e.g., an etchant precursor, an oxygen-containing precursor, and a silicon-and-fluorine-containing precursor like silicon tetrafluoride). The plasma effluents may then contact a silicon-containing material and a mask material on a substrate in a processing region of a semiconductor processing chamber. The mask material may have one or more apertures therein that allow the plasma effluents access to the silicon-containing material. Contacting the silicon-containing material and the mask material with the plasma effluents may cause (i) etching the silicon-containing material with the plasma effluents to form and/or deepen one or more features in the silicon-containing material and (ii) simultaneously etching the mask material and depositing a silicon-and-oxygen-containing material on the mask material with the plasma effluents.

公开(公告)号：US11437230B2

公开(公告)日：2022-09-06

申请号：US16841010

申请日：2020-04-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei Wu ,  Feng Zhang ,  Xiawan Yang ,  Jinhan Choi ,  Anisul Haque Khan

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50

Abstract: Disclosed herein is a high throughput method for providing directional protection to a three dimensional feature on a substrate by forming a multi-layer amorphous carbon-containing coating with tunable conformality thereon. Forming the multi-layer amorphous carbon-containing coating with tunable conformality includes depositing a base layer onto a horizontal surface of the three dimensional features, and a second layer over the base layer and onto a first portion of a vertical or inclined surface of the three dimensional feature. The base layer includes a first material with a first sticking coefficient and the second layer includes a second material with a second sticking coefficient that is smaller than the first sticking coefficient. The first material includes no fluorine or less fluorine than the second material. Also disclosed herein is a method of manufacturing a three dimensional device as well as three dimensional devices.

公开(公告)号：US20210313166A1

公开(公告)日：2021-10-07

申请号：US16841010

申请日：2020-04-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei Wu ,  Feng Zhang ,  Xiawan Yang ,  Jinhan Choi ,  Anisul Haque Khan

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/26

Abstract: Disclosed herein is a high throughput method for providing directional protection to a three dimensional feature on a substrate by forming a multi-layer amorphous carbon-containing coating with tunable conformality thereon. Forming the multi-layer amorphous carbon-containing coating with tunable conformality includes depositing a base layer onto a horizontal surface of the three dimensional features, and a second layer over the base layer and onto a first portion of a vertical or inclined surface of the three dimensional feature. The base layer includes a first material with a first sticking coefficient and the second layer includes a second material with a second sticking coefficient that is smaller than the first sticking coefficient. The first material includes no fluorine or less fluorine than the second material. Also disclosed herein is a method of manufacturing a three dimensional device as well as three dimensional devices.

公开(公告)号：US09305748B2

公开(公告)日：2016-04-05

申请号：US14064890

申请日：2013-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Gaurav Saraf ,  Xiawan Yang ,  Farid Abooameri ,  Wen Teh Chang ,  Anisul H. Khan ,  Bradley Scott Hersch

IPC: H01L21/302 ,  H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32431 ,  H01J37/32935 ,  H01J37/3299

Abstract: Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset Δα in tilt angle α between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset Δα.

Abstract translation: 蚀刻速率分布以相对于工件的RF源功率施加器的一系列硬件倾斜角度被捕获，并且计算其非均匀性，并且该行为被建模为至少两个等离子体反应器中的每一个的非均匀性函数。 检测两个等离子体反应器的非均匀性函数之间的倾斜角α的偏移＆Dgr;α。 然后通过以等于偏移＆Dgr;α的倾斜角执行其中一个中的硬件倾斜来匹配两个等离子体反应器。

公开(公告)号：US20250054770A1

公开(公告)日：2025-02-13

申请号：US18232991

申请日：2023-08-11

Applicant: Applied Materials, Inc.

Inventor： Jiajing Li ,  Mengjie Lyu ,  Menghui Li ,  Xiawan Yang ,  Olivier P. Joubert ,  Susumu Shinohara ,  Qian Fu

IPC: H01L21/311

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of oxygen-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The contacting may etch a feature in the layer of oxygen-containing material. A semiconductor processing chamber operating temperature may be maintained at less than or about 0° C. during the semiconductor processing method.

公开(公告)号：US20250054768A1

公开(公告)日：2025-02-13

申请号：US18232985

申请日：2023-08-11

Applicant: Applied Materials, Inc.

Inventor： Jiajing Li ,  Mengjie Lyu ,  Menghui Li ,  Xiawan Yang ,  Olivier P. Joubert ,  Susumu Shinohara ,  Qian Fu

IPC: H01L21/3065 ,  H01L21/308

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor and a sulfur-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of carbon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the oxygen-containing precursor and the sulfur-containing precursor. The methods may include contacting the substrate with the plasma effluents of the oxygen-containing precursor and the sulfur-containing precursor. The contacting may etch a feature in the layer of carbon-containing material. A chamber operating temperature may be maintained at less than or about 0° C.

公开(公告)号：US11935751B2

公开(公告)日：2024-03-19

申请号：US17330013

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Siyu Zhu ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Yeonju Kwak ,  Jeong Hwan Kim ,  Qian Fu ,  Xiawan Yang

IPC: H01L21/033 ,  C23C16/04 ,  C23C16/34 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/0337 ,  C23C16/042 ,  C23C16/342 ,  C23C16/4584 ,  C23C16/50 ,  H01J37/32449 ,  H01L21/0332 ,  H01L21/31144 ,  H01J2237/332

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.