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    DEPOSITION OF LOW-STRESS CARBON-CONTAINING LAYERS
    2.
    发明申请
    DEPOSITION OF LOW-STRESS CARBON-CONTAINING LAYERS 有权

    公开(公告)号：US20220319841A1

    公开(公告)日：2022-10-06

    申请号：US17847454

    申请日：2022-06-23

    Applicant: Applied Materials, Inc.

    Inventor： Huiyuan Wang ,  Rick Kustra ,  Bo Qi ,  Abhijit Basu Mallick ,  Kaushik Alayavalli ,  Jay D. Pinson

    IPC: H01L21/02

    Abstract: Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50° C. A plasma may be generated from the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sp3 hybridized bonds.

    Diffusion barriers for germanium
    7.
    发明授权
    Diffusion barriers for germanium 有权

    公开(公告)号：US11791155B2

    公开(公告)日：2023-10-17

    申请号：US17004262

    申请日：2020-08-27

    Applicant: Applied Materials, Inc.

    Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    IPC: H01L21/02 ,  H01L29/16

    CPC classification number: H01L21/02304 ,  H01L21/02236 ,  H01L21/02362 ,  H01L21/02532 ,  H01L29/16

    Abstract: Examples of the present technology include semiconductor processing methods to form diffusion barriers for germanium in a semiconductor structure. The methods may include forming a semiconductor layer stack from pairs of Si-and-SiGe layers. The Si-and-SiGe layer pairs may be formed by forming a silicon layer, and then forming the germanium barrier layer of the silicon layer. In some embodiments, the germanium-barrier layer may be less than or about 20 Å. A silicon-germanium layer may be formed on the germanium-barrier layer to complete the formation of the Si-and-SiGe layer pair. In some embodiments, the silicon layer may be an amorphous silicon layer, and the SiGe layer may be characterized by greater than or about 5 atom % germanium. Examples of the present technology also include semiconductor structures that include a silicon-germanium layer, a germanium-barrier layer, and a silicon layer.

    Deposition of low-stress boron-containing layers
    8.
    发明授权
    Deposition of low-stress boron-containing layers 有权

    公开(公告)号：US11495454B2

    公开(公告)日：2022-11-08

    申请号：US16987704

    申请日：2020-08-07

    Applicant: Applied Materials, Inc.

    Inventor： Huiyuan Wang ,  Rick Kustra ,  Bo Qi ,  Abhijit Basu Mallick ,  Kaushik Alayavalli ,  Jay D. Pinson

    IPC: H01L21/02 ,  C23C16/32 ,  C23C16/50 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40

    Abstract: Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50° C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about −500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.

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