公开(公告)号：US11515170B2

公开(公告)日：2022-11-29

申请号：US17137637

申请日：2020-12-30

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick ,  Rui Cheng ,  Tomohiko Kitajima ,  Harry S. Whitesell ,  Huiyuan Wang

IPC: H01L21/311 ,  H01L21/02 ,  H01L27/11551 ,  H01L27/11578

Abstract: Methods of etching film stacks to form gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

公开(公告)号：US20220319841A1

公开(公告)日：2022-10-06

申请号：US17847454

申请日：2022-06-23

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Rick Kustra ,  Bo Qi ,  Abhijit Basu Mallick ,  Kaushik Alayavalli ,  Jay D. Pinson

IPC: H01L21/02

Abstract: Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50° C. A plasma may be generated from the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sp3 hybridized bonds.

公开(公告)号：US20220223409A1

公开(公告)日：2022-07-14

申请号：US17144972

申请日：2021-01-08

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02

Abstract: Exemplary methods of semiconductor processing may include providing a boron-and-carbon-and-nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include generating a capacitively-coupled plasma of the boron-and-carbon-and-nitrogen-containing precursor. The methods may include forming a boron-and-carbon-and-nitrogen-containing layer on the substrate. The boron-and-carbon-and-nitrogen-containing layer may be characterized by a dielectric constant below or about 3.5.

公开(公告)号：US20210277516A1

公开(公告)日：2021-09-09

申请号：US16817120

申请日：2020-03-12

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Ahbijit Basu Mallick ,  Eugene Yu Jin Kong ,  Bo Qi

IPC: C23C16/26 ,  H01L21/02 ,  H01L23/532

Abstract: Methods of forming carbon polymer films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to a first carbon precursor to form a substrate surface with terminations based on the reactive functional groups of the first carbon precursor and exposed to a second carbon precursor to react with the surface terminations and form a carbon polymer film. Processing tools and non-transitory memories to perform the process are also disclosed.

公开(公告)号：US12018364B2

公开(公告)日：2024-06-25

申请号：US17119655

申请日：2020-12-11

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC: C23C16/40

CPC classification number: C23C16/407

Abstract: Methods for forming coating films comprising germanium oxide are disclosed. In some embodiments, the films are super-conformal to a feature on the surface of a substrate. The films are deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the super-conformal film.

公开(公告)号：US11732352B2

公开(公告)日：2023-08-22

申请号：US17173871

申请日：2021-02-11

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: C23C16/40 ,  C23C16/52

CPC classification number: C23C16/402 ,  C23C16/52

Abstract: Hydrogen free (low-H) silicon dioxide layers are disclosed. Some embodiments provide methods for forming low-H layers using hydrogen-free silicon precursors and hydrogen-free oxygen sources. Some embodiments provide methods for tuning the stress profile of low-H silicon dioxide films. Further, some embodiments of the disclosure provide oxide-nitride stacks which exhibit reduced stack bow after anneal.

公开(公告)号：US11676813B2

公开(公告)日：2023-06-13

申请号：US17025009

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rui Cheng ,  Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/324 ,  H01J37/32 ,  C23C16/56 ,  C23C16/50 ,  C23C16/30 ,  C23C16/24

CPC classification number: H01L21/0257 ,  C23C16/24 ,  C23C16/30 ,  C23C16/50 ,  C23C16/56 ,  H01J37/3244 ,  H01L21/02532 ,  H01L21/324 ,  H01J2237/332

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the silicon-containing precursor and the boron-containing precursor. The dopant-containing precursor may include one or more of carbon, nitrogen, oxygen, or sulfur. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The silicon-and-boron material may include greater than or about 1 at. % of a dopant from the dopant-containing precursor.

公开(公告)号：US20220336212A1

公开(公告)日：2022-10-20

申请号：US17235241

申请日：2021-04-20

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/311 ,  H01J37/32

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a boron-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor, the carbon-containing precursor, and the boron-containing precursor at a temperature above about 250° C. The methods may include forming a silicon-and-carbon-containing layer on the substrate.

公开(公告)号：US20210305041A1

公开(公告)日：2021-09-30

申请号：US17211452

申请日：2021-03-24

Applicant: Applied Materials, Inc.

Inventor： Bo Qi ,  Zeqing Shen ,  Abhijit Basu Mallick

IPC: H01L21/02

Abstract: Exemplary methods of semiconductor processing may include providing a boron-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. The methods may include thermally reacting the boron-containing precursor and the carbon-containing precursor at a temperature below about 650° C. The methods may include forming a boron-and-carbon-containing layer on the substrate.

公开(公告)号：US20210047733A1

公开(公告)日：2021-02-18

申请号：US16989167

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： Bo Qi ,  Huiyuan Wang ,  Yingli Rao ,  Abhijit Basu Mallick

IPC: C23C16/56 ,  C23C16/30 ,  C23C16/455 ,  H01L27/11551 ,  H01L27/11524 ,  H01L27/108

Abstract: A non-conformal, highly selective liner for etch methods in semiconductor devices is described. A method comprises forming a film stack on a substrate; etching the film stack to form an opening; depositing a non-conformal liner in the opening; etching the non-conformal liner from the bottom of the opening; and selectively etching the film stack relative to the non-conformal liner to form a logic or memory hole. The non-conformal liner comprises one or more of boron, carbon, or nitrogen.