公开(公告)号：US11955333B2

公开(公告)日：2024-04-09

申请号：US17208719

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Jethro Tannos ,  Bhargav Sridhar Citla ,  Srinivas D. Nemani ,  Ellie Yieh ,  Joshua Alan Rubnitz ,  Erica Chen ,  Soham Sunjay Asrani ,  Nikolaos Bekiaris ,  Douglas Arthur Buchberger, Jr.

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02

CPC classification number: H01L21/02326 ,  C23C16/401 ,  C23C16/4584 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32174 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02274 ,  H01J2237/20214 ,  H01J2237/3321

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

公开(公告)号：US11972943B2

公开(公告)日：2024-04-30

申请号：US16578050

申请日：2019-09-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Bhargav S. Citla ,  Jethro Tannos ,  Srinivas D Nemani ,  Joshua Rubnitz

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/45536 ,  H01J37/321 ,  H01L21/02164

Abstract: Methods and apparatus for depositing a dielectric material include: providing a first gas mixture into a processing chamber having a substrate disposed therein; forming a first remote plasma comprising first radicals in a remote plasma source and delivering the first radicals to an interior processing region in the processing chamber to form a layer of dielectric material in an opening in a material layer disposed on the substrate in a presence of the first gas mixture and the first radicals; terminating the first remote plasma and applying a first RF bias power to the processing chamber to form a first bias plasma; contacting the layer of dielectric material with the first bias plasma to form a first treated layer of dielectric material; and subsequently forming a second remote plasma comprising second radicals in the remote plasma source and delivering the second radicals to the interior processing region in the processing chamber in a presence of a second gas mixture while applying a second RF bias power to the processing chamber to form a second bias plasma, wherein the second radicals and second bias plasma contact the first treated layer of dielectric material to increase a hydrophobicity or a viscosity of the first treated layer of dielectric material.

公开(公告)号：US11049731B2

公开(公告)日：2021-06-29

申请号：US16586806

申请日：2019-09-27

Applicant: Applied Materials, Inc.

Inventor： Erica Chen ,  Chentsau Chris Ying ,  Bhargav S. Citla ,  Jethro Tannos ,  Matthew August Mattson

IPC: H01L21/322 ,  H01L21/425 ,  H01L21/02

Abstract: A method of converting films is disclosed. A method of modifying films is also disclosed. Some methods advantageously convert films from a first elemental composition to a second elemental composition. Some methods advantageously modify film properties without modifying film composition.

公开(公告)号：US20210189555A1

公开(公告)日：2021-06-24

申请号：US17120494

申请日：2020-12-14

Applicant: Applied Materials, Inc.

Inventor： Mei-Yee Shek ,  Bhargav S. Citla ,  Joshua Rubnitz ,  Jethro Tannos ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/36 ,  C01B21/082 ,  C09D1/00 ,  C23C16/50 ,  C23C16/44

Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：US11566325B2

公开(公告)日：2023-01-31

申请号：US17120494

申请日：2020-12-14

Applicant: Applied Materials, Inc.

Inventor： Mei-Yee Shek ,  Bhargav S. Citla ,  Joshua Rubnitz ,  Jethro Tannos ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/36 ,  C01B21/082 ,  C23C16/44 ,  C23C16/50 ,  C09D1/00

Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：US11114306B2

公开(公告)日：2021-09-07

申请号：US16132837

申请日：2018-09-17

Applicant: Applied Materials, Inc.

Inventor： Bhargav Citla ,  Jethro Tannos ,  Jingyi Li ,  Douglas A. Buchberger, Jr. ,  Zhong Qiang Hua ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/505 ,  H01L21/311 ,  H01L21/762 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/515 ,  H01L21/02 ,  C23C16/509 ,  C23C16/517

Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

公开(公告)号：US11631591B2

公开(公告)日：2023-04-18

申请号：US17408943

申请日：2021-08-23

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Jethro Tannos ,  Jingyi Li ,  Douglas A. Buchberger, Jr. ,  Zhong Qiang Hua ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/505 ,  H01L21/311 ,  H01L21/762 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/515 ,  H01L21/02 ,  C23C16/509 ,  C23C16/517

Abstract: Methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications are provided. For example, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

公开(公告)号：US20230066497A1

公开(公告)日：2023-03-02

申请号：US17978447

申请日：2022-11-01

Applicant: Applied Materials, Inc.

Inventor： Mei-Yee Shek ,  Bhargav S. Citla ,  Joshua Rubnitz ,  Jethro Tannos ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/36 ,  C01B21/082 ,  C23C16/44 ,  C23C16/50 ,  C09D1/00

Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：US20210090883A1

公开(公告)日：2021-03-25

申请号：US16578050

申请日：2019-09-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Bhargav S. Citla ,  Jethro Tannos ,  Srinivas D. Nemani ,  Joshua Rubnitz

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32

Abstract: Methods and apparatus for depositing a dielectric material include: providing a first gas mixture into a processing chamber having a substrate disposed therein; forming a first remote plasma comprising first radicals in a remote plasma source and delivering the first radicals to an interior processing region in the processing chamber to form a layer of dielectric material in an opening in a material layer disposed on the substrate in a presence of the first gas mixture and the first radicals; terminating the first remote plasma and applying a first RF bias power to the processing chamber to form a first bias plasma; contacting the layer of dielectric material with the first bias plasma to form a first treated layer of dielectric material; and subsequently forming a second remote plasma comprising second radicals in the remote plasma source and delivering the second radicals to the interior processing region in the processing chamber in a presence of a second gas mixture while applying a second RF bias power to the processing chamber to form a second bias plasma, wherein the second radicals and second bias plasma contact the first treated layer of dielectric material to increase a hydrophobicity or a viscosity of the first treated layer of dielectric material.