公开(公告)号：US20210189555A1

公开(公告)日：2021-06-24

申请号：US17120494

申请日：2020-12-14

Applicant: Applied Materials, Inc.

Inventor： Mei-Yee Shek ,  Bhargav S. Citla ,  Joshua Rubnitz ,  Jethro Tannos ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/36 ,  C01B21/082 ,  C09D1/00 ,  C23C16/50 ,  C23C16/44

Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：US20230066497A1

公开(公告)日：2023-03-02

申请号：US17978447

申请日：2022-11-01

Applicant: Applied Materials, Inc.

Inventor： Mei-Yee Shek ,  Bhargav S. Citla ,  Joshua Rubnitz ,  Jethro Tannos ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/36 ,  C01B21/082 ,  C23C16/44 ,  C23C16/50 ,  C09D1/00

Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：US20210090883A1

公开(公告)日：2021-03-25

申请号：US16578050

申请日：2019-09-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Bhargav S. Citla ,  Jethro Tannos ,  Srinivas D. Nemani ,  Joshua Rubnitz

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32

Abstract: Methods and apparatus for depositing a dielectric material include: providing a first gas mixture into a processing chamber having a substrate disposed therein; forming a first remote plasma comprising first radicals in a remote plasma source and delivering the first radicals to an interior processing region in the processing chamber to form a layer of dielectric material in an opening in a material layer disposed on the substrate in a presence of the first gas mixture and the first radicals; terminating the first remote plasma and applying a first RF bias power to the processing chamber to form a first bias plasma; contacting the layer of dielectric material with the first bias plasma to form a first treated layer of dielectric material; and subsequently forming a second remote plasma comprising second radicals in the remote plasma source and delivering the second radicals to the interior processing region in the processing chamber in a presence of a second gas mixture while applying a second RF bias power to the processing chamber to form a second bias plasma, wherein the second radicals and second bias plasma contact the first treated layer of dielectric material to increase a hydrophobicity or a viscosity of the first treated layer of dielectric material.

公开(公告)号：US20230377875A1

公开(公告)日：2023-11-23

申请号：US18229285

申请日：2023-08-02

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Soham Asrani ,  Joshua Rubnitz ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/02274 ,  H01L21/3065 ,  H01J37/32146 ,  H01L21/31116 ,  H01J2237/332 ,  H01J2237/334

Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The processing region may be at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.

公开(公告)号：US11566325B2

公开(公告)日：2023-01-31

申请号：US17120494

申请日：2020-12-14

Applicant: Applied Materials, Inc.

Inventor： Mei-Yee Shek ,  Bhargav S. Citla ,  Joshua Rubnitz ,  Jethro Tannos ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/36 ,  C01B21/082 ,  C23C16/44 ,  C23C16/50 ,  C09D1/00

Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：US11972943B2

公开(公告)日：2024-04-30

申请号：US16578050

申请日：2019-09-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Bhargav S. Citla ,  Jethro Tannos ,  Srinivas D Nemani ,  Joshua Rubnitz

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/45536 ,  H01J37/321 ,  H01L21/02164

Abstract: Methods and apparatus for depositing a dielectric material include: providing a first gas mixture into a processing chamber having a substrate disposed therein; forming a first remote plasma comprising first radicals in a remote plasma source and delivering the first radicals to an interior processing region in the processing chamber to form a layer of dielectric material in an opening in a material layer disposed on the substrate in a presence of the first gas mixture and the first radicals; terminating the first remote plasma and applying a first RF bias power to the processing chamber to form a first bias plasma; contacting the layer of dielectric material with the first bias plasma to form a first treated layer of dielectric material; and subsequently forming a second remote plasma comprising second radicals in the remote plasma source and delivering the second radicals to the interior processing region in the processing chamber in a presence of a second gas mixture while applying a second RF bias power to the processing chamber to form a second bias plasma, wherein the second radicals and second bias plasma contact the first treated layer of dielectric material to increase a hydrophobicity or a viscosity of the first treated layer of dielectric material.

公开(公告)号：US11862458B2

公开(公告)日：2024-01-02

申请号：US17469529

申请日：2021-09-08

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Soham Asrani ,  Joshua Rubnitz ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/02274 ,  H01J37/32146 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/332 ,  H01J2237/334

Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The processing region may be at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.

公开(公告)号：US20230071366A1

公开(公告)日：2023-03-09

申请号：US17469529

申请日：2021-09-08

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Soham Asrani ,  Joshua Rubnitz ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01J37/32

Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The processing region may be at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.