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公开(公告)号:US20240395505A1
公开(公告)日:2024-11-28
申请号:US18791193
申请日:2024-07-31
Applicant: Applied Materials, Inc.
Inventor: Jie Yu , Yue Guo , Kartik Ramaswamy , Tao Zhang , Shahid Rauf , John Forster , Sidharth Bhatia , Rong Gang Zheng
IPC: H01J37/32
Abstract: Embodiments disclosed herein include a dynamic load simulator. In an embodiment, the dynamic load simulator comprises an impedance load, a reverse match network, and a smart RF controller. In an embodiment, the smart RF controller comprises a dynamic load generator, and a reverse match controller.
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公开(公告)号:US20230411119A1
公开(公告)日:2023-12-21
申请号:US17843830
申请日:2022-06-17
Applicant: Applied Materials, Inc.
Inventor: Jie Yu , Yue Guo , Kartik Ramaswamy , Tao Zhang , Shahid Rauf , John Forster , Sidharth Bhatia , Rong Gang Zheng
IPC: H01J37/32
CPC classification number: H01J37/32183 , H01J37/32926
Abstract: Embodiments disclosed herein include a dynamic load simulator. In an embodiment, the dynamic load simulator comprises an impedance load, a reverse match network, and a smart RF controller. In an embodiment, the smart RF controller comprises a dynamic load generator, and a reverse match controller.
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3.
公开(公告)号:US12272524B2
公开(公告)日:2025-04-08
申请号:US17947675
申请日:2022-09-19
Applicant: Applied Materials, Inc.
Inventor: Yue Guo , Kartik Ramaswamy , Jie Yu , Yang Yang
IPC: H01J37/32
Abstract: A wideband variable impedance load for high volume manufacturing qualification and diagnostic testing of a radio frequency power source, an impedance matching network and RF sensors for generating plasma in a semiconductor plasma chamber for semiconductor fabrication processes. The wideband variable impedance load may comprise a fixed value resistance operable at a plurality of frequencies and coupled with a variable impedance network capable of transforming the fixed value resistance into a wide range of complex impedances at the plurality of frequencies. Response times and match tuning element position repeatability may be verified. Automatic testing, verification and qualification of production and field installed radio frequency power sources for plasma generation are easily performed.
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公开(公告)号:US12020901B2
公开(公告)日:2024-06-25
申请号:US17314173
申请日:2021-05-07
Applicant: Applied Materials, Inc.
Inventor: Yue Guo , Krishna Kumar Kuttannair , Jie Yu , Kartik Ramaswamy , Yang Yang
CPC classification number: H01J37/32183 , H03H7/40 , H01J2237/334
Abstract: Methods and apparatus using a matching network for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises a local controller connectable to a system controller of the plasma processing chamber, a first motorized capacitor connected to the local controller, a second motorized capacitor connected to the first motorized capacitor, a first sensor at an input of the matching network and a second sensor at an output of the matching network for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively, and an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting the local controller to the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor.
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公开(公告)号:US12080519B2
公开(公告)日:2024-09-03
申请号:US17843830
申请日:2022-06-17
Applicant: Applied Materials, Inc.
Inventor: Jie Yu , Yue Guo , Kartik Ramaswamy , Tao Zhang , Shahid Rauf , John Forster , Sidharth Bhatia , Rong Gang Zheng
IPC: H01J37/32
CPC classification number: H01J37/32183 , H01J37/32926
Abstract: Embodiments disclosed herein include a dynamic load simulator. In an embodiment, the dynamic load simulator comprises an impedance load, a reverse match network, and a smart RF controller. In an embodiment, the smart RF controller comprises a dynamic load generator, and a reverse match controller.
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