公开(公告)号：US20240304420A1

公开(公告)日：2024-09-12

申请号：US18344307

申请日：2023-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Siyoung Koh ,  Hadong Jin ,  Namkyun Kim ,  Seungbo Shim ,  Sungyong Lim ,  Sungyeol Kim

IPC: H01J37/32 ,  G01R27/16

CPC classification number: H01J37/32183 ,  G01R27/16 ,  H01J37/32926 ,  H01J37/32935

Abstract: An apparatus for providing radio frequency (RF) power includes a load having a process chamber, a RF power generator configured to provide the RF power through a cable electrically connected to the load, and a reflected power controller configured to detect reflected power from the load in a delivery mode and configured to control the RF power according to the reflected power that was detected.

公开(公告)号：US20240297027A1

公开(公告)日：2024-09-05

申请号：US18026418

申请日：2022-03-04

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Soichiro ETO ,  Shigeru NAKAMOTO ,  Kosuke FUKUCHI

IPC: H01J37/32 ,  H01L21/66

CPC classification number: H01J37/32963 ,  H01J37/32926 ,  H01J37/32972 ,  H01L22/26 ,  H01J2237/3346

Abstract: A plasma processing method apparatus for accurately estimating the amount of lateral etching and determining an end point based on the estimated amount of etching, including: a first step of irradiating the wafer with light; a second step of receiving light reflected from the wafer at a plurality of predetermined times during the plasma process on the wafer; a third step of performing signal processing on light amount data on each of a plurality of wavelengths of the light thus received; a fourth step of determining the amount of etching in the wafer during the plasma process by use of processed data subjected to the signal processing; and a fifth step of determining an end point of the plasma process based on the amount of etching.

公开(公告)号：US20240274419A1

公开(公告)日：2024-08-15

申请号：US18529011

申请日：2023-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangho LEE ,  Sangki NAM ,  Jitae PARK ,  Seongjin IN ,  Keonhee LIM ,  Sungho JANG

IPC: H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32926

Abstract: A plasma monitoring system includes a chamber with an internal space configured to perform a plasma process on a semiconductor substrate, the chamber including a view window and a substrate stage, a light transmitter on the view window and including optical fibers configured to obtain a first light generated during the plasma process, a detachable reflection mirror between the view window and the optical fibers, a light generator configured to irradiate a second light onto the reflection mirror through the optical fibers and to irradiate a third light onto the view window through the optical fibers, and a light analyzer configured to obtain a light spectrum from the first light, to correct the light spectrum based on the second light reflected from the reflection mirror, and to correct the light spectrum based on the third light reflected from the view window.

公开(公告)号：US12027426B2

公开(公告)日：2024-07-02

申请号：US17163066

申请日：2021-01-29

Applicant: Applied Materials, Inc.

Inventor： Vladimir Nagorny

IPC: G05B15/00 ,  G05B15/02 ,  H01J37/32 ,  H01L21/66 ,  B01J23/06 ,  C03C17/36 ,  G01T1/24 ,  H01M10/0525

CPC classification number: H01L22/12 ,  G05B15/02 ,  H01J37/32 ,  H01J37/32348 ,  H01J37/32926 ,  H01J37/32935 ,  B01J23/06 ,  C03C17/36 ,  G01T1/24 ,  H01J2237/24585 ,  H01L22/20 ,  H01M10/0525

Abstract: A system and method including a processing device. The processing device receives data including a first set of plasma exposure values each associated with a respective plasma element of a plurality of plasma elements designed to generate plasma related fluxes. The processing device causes a plasma controller to activate the set of plasma elements based on the data to expose a substrate to the plasma related fluxes generated by the set of plasma elements during a plasma process. Each respective plasma element of the set of plasma elements is activated for a duration based on a respective plasma exposure value from the first plurality of plasma exposure values that is associated with the respective plasma element.

公开(公告)号：US20240203711A1

公开(公告)日：2024-06-20

申请号：US17907067

申请日：2021-03-24

Applicant: Lam Research Corporation

Inventor： Sunil Kapoor ,  David French ,  Gary Lemson ,  Liang Meng

IPC: H01J37/32 ,  G01R15/16 ,  G01R15/18 ,  G01R19/165 ,  G01R19/25 ,  G01R25/00 ,  G01R35/00 ,  H01L21/67

CPC classification number: H01J37/32935 ,  G01R15/16 ,  G01R15/183 ,  G01R19/16528 ,  G01R19/2509 ,  G01R25/00 ,  G01R35/007 ,  H01J37/32183 ,  H01J37/32926 ,  H01L21/67161 ,  H01L21/67253

Abstract: An apparatus to estimate parameters of a radio frequency (RF) signal may include a voltage sensor configured to provide an indication of a voltage of the RF signal as well as a current sensor configured to provide an indication of current conducted by the RF signal. The apparatus may additionally include an analog-to-digital converter coupled to an output port of the voltage sensor and the current sensor, wherein the analog-to-digital converter is configured to provide digital representations of an instantaneous voltage and an instantaneous current of the RF signal. The apparatus may additionally include one or more processors configured to transform the digital representations of the instantaneous voltage and current into frequency domain representations of a complex voltage and complex current.

公开(公告)号：US11990324B2

公开(公告)日：2024-05-21

申请号：US17685898

申请日：2022-03-03

Applicant: Advanced Energy Industries, Inc.

Inventor： Chad S. Samuels ,  David Coumou

IPC: H01J37/32 ,  G05B13/04 ,  G05B15/02 ,  G05B19/4155 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32926 ,  G05B13/048 ,  G05B15/02 ,  G05B19/4155 ,  H01J37/32 ,  H01J37/32009 ,  H01J37/32449 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/3065 ,  H01L21/67253

Abstract: This disclosure describes systems, methods, and apparatus for a plasma processing system. A method comprises receiving a reference signal defining target values for a parameter that is controlled at an output within the plasma processing system, obtaining a measure of the parameter that is controlled at the output, and calculating a delay between the target values of the setpoint signal and corresponding actual parameter values achieved at the output. The method also comprises providing, based upon the delay, a time-shifted amplitude error indicative of an error between the target values and the actual parameter values and adjusting at least one actuator, based upon the delay and the time-shifted amplitude error, in advance of when an actual parameter value is desired at an actuator output of the at least one actuator while maintaining the output within a threshold range.

公开(公告)号：US20240162009A1

公开(公告)日：2024-05-16

申请号：US18377918

申请日：2023-10-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Tao Zhang ,  Upendra Ummethala

IPC: H01J37/32 ,  H03H7/40 ,  H05H1/46

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/32926 ,  H01J37/32935 ,  H03H7/40 ,  H05H1/46 ,  H05H1/4652

Abstract: A method includes receiving, from one or more sensors, sensor data associated with manufacturing equipment and updating one or more values of a digital replica associated with the manufacturing equipment based on the sensor data. The digital replica comprises a model reflecting a virtual representation of physical elements and dynamics of how the manufacturing equipment operates. One or more outputs indicative of predictive data is obtained from the digital replica and, based on the predictive data, performance of one or more corrective actions associated with the manufacturing equipment is caused.

公开(公告)号：US11908660B2

公开(公告)日：2024-02-20

申请号：US17691011

申请日：2022-03-09

Applicant: Lam Research Corporation

Inventor： Ranadeep Bhowmick ,  John Holland ,  Felix Leib Kozakevich ,  Bing Ji ,  Alexei Marakhtanov

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32128 ,  H01J37/32165 ,  H01J37/32926

Abstract: A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.

公开(公告)号：US11869754B2

公开(公告)日：2024-01-09

申请号：US16563352

申请日：2019-09-06

Applicant: Applied Materials, Inc.

Inventor： Tina Dhekial-Phukan ,  Michael Nichols

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01J37/32816 ,  C23C16/45557 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32926 ,  H01J37/32981 ,  H01L21/67253

Abstract: System and methods of improving dynamic pressure response during recipe step transitions. An exemplary method may include changing at least one of a plurality of recipe parameters in accordance with a processing recipe while running the processing recipe on a semiconductor substrate in a processing chamber. The method may further include measuring a pressure response in the processing chamber responsive to the changing of the at least one of the plurality of recipe parameters, and determining a response error based on the pressure response and a model pressure response calculated based on the processing recipe. The method may further include, in response to determining that the response error may be greater than a threshold value, calculating an adjustment to an operation of a valve downstream of the processing chamber when changing the at least one of the plurality of recipe parameters in accordance with the processing recipe in subsequent runs.

公开(公告)号：US20230395361A1

公开(公告)日：2023-12-07

申请号：US18366084

申请日：2023-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsiang CHENG ,  Che-Wei WU

IPC: H01J37/32 ,  C23C16/52

CPC classification number: H01J37/32926 ,  C23C16/52 ,  H01J37/32981 ,  H01J37/32733 ,  H01J2237/3321

Abstract: A thin-film deposition system includes a top plate positioned above a wafer and configured to generate a plasma during a thin-film deposition process. The system includes a sensor configured to generate sensor signals indicative of a lifetime of a component of the thin-film deposition system, a characteristic of a thin-film deposited by the thin-film deposition system or a characteristic of a process material that flows into the thin-film deposition system. The system includes a control system configured to adjust a relative location of a top plate of the thin-film deposition system with respect to a location of a wafer in the thin-film deposition system during the thin-film deposition process responsive to the sensor signals.