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    RATING SUBSTRATE SUPPORT ASSEMBLIES BASED ON IMPEDANCE CIRCUIT ELECTRON FLOW
    3.
    发明申请
    RATING SUBSTRATE SUPPORT ASSEMBLIES BASED ON IMPEDANCE CIRCUIT ELECTRON FLOW 有权

    公开(公告)号：US20250157788A1

    公开(公告)日：2025-05-15

    申请号：US19020804

    申请日：2025-01-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Arvind Shankar Raman ,  Harikrishnan Rajagopal ,  John Forster

    IPC: H01J37/244 ,  G01R21/133 ,  G01R27/26 ,  G06N20/00 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H04Q9/00

    Abstract: Data associated with a power testing process performed for a substrate support assembly is provided as input to a trained machine learning model. A measurement value for an electron flow across one or more components of the substrate support assembly in accordance with the power testing process is obtained based on one or more outputs of the trained machine learning model. A first quality rating or a second quality rating is assigned to the substrate support assembly based on whether the measurement value satisfies an electron flow criterion, wherein the first quality rating indicates a higher quality than the second quality rating. An indication of whether the substrate support assembly is to be installed at a processing chamber in view of the assigned second quality rating is transmitted to a client device.

    RATING SUBSTRATE SUPPORT ASSEMBLIES BASED ON IMPEDANCE CIRCUIT ELECTRON FLOW
    5.
    发明申请
    RATING SUBSTRATE SUPPORT ASSEMBLIES BASED ON IMPEDANCE CIRCUIT ELECTRON FLOW 有权

    公开(公告)号：US20220238300A1

    公开(公告)日：2022-07-28

    申请号：US17158811

    申请日：2021-01-26

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Arvind Shankar Raman ,  Harikrishnan Rajagopal ,  John Forster

    IPC: H01J37/244 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  G01R21/133 ,  G01R27/26 ,  H04Q9/00 ,  G06N20/00

    Abstract: Methods and systems for rating a current substrate support assembly based on impedance circuit electron flow are provided. Data associated with an amount of radio frequency (RF) power flowed through an electrical component of a current substrate support assembly during a current testing process performed for the current substrate support assembly is provided as input to a trained machine learning model. One or more outputs of the trained machine learning model are obtained. A measurement value for an electron flow across an impedance circuit of the current substrate support assembly is extracted from the one or more outputs. In response to a determination that the extracted measurement value for the electron flow satisfies an electron flow criterion, a first quality rating is assigned to the current substrate support assembly.

    Process kit for deposition and etching
    6.
    发明授权
    Process kit for deposition and etching 有权

    公开(公告)号：US10099245B2

    公开(公告)日：2018-10-16

    申请号：US13831285

    申请日：2013-03-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： John Forster ,  Zhenbin Ge ,  Alan Ritchie

    IPC: C23C16/44 ,  H01L21/67 ,  B05C21/00 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34

    Abstract: Variable geometry process kits for use in semiconductor process chambers have been provided herein. In some embodiments, a process kit for use in a semiconductor process chamber includes: an annular body configured to rest about a periphery of a substrate support; a first ring positioned coaxially with the annular body and supported by the annular body; a second ring positioned coaxially with the first ring and supported by the first ring; and an annular shield comprising a horizontal leg positioned coaxially with the second ring such that a portion of the horizontal leg is aligned with and below portions of the first ring and second ring.

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