公开(公告)号：US11990332B2

公开(公告)日：2024-05-21

申请号：US16637170

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Zhelin Sun ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Yijun Liu ,  Lin Yang

IPC: C23C16/455 ,  C23C16/36 ,  C23C16/56 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/324

Abstract: Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.

公开(公告)号：US20200332415A1

公开(公告)日：2020-10-22

申请号：US16637170

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Zhelin Sun ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Yijun Liu ,  Lin Yang

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/02

Abstract: Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.