公开(公告)号：US10453678B2

公开(公告)日：2019-10-22

申请号：US15951655

申请日：2018-04-12

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Zhelin Sun ,  Mihaela Balseanu ,  Li-Qun Xia ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/04 ,  C23C16/36 ,  C23C16/455

Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.

公开(公告)号：US20200332415A1

公开(公告)日：2020-10-22

申请号：US16637170

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Zhelin Sun ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Yijun Liu ,  Lin Yang

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/02

Abstract: Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.

公开(公告)号：US11990332B2

公开(公告)日：2024-05-21

申请号：US16637170

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Zhelin Sun ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Yijun Liu ,  Lin Yang

IPC: C23C16/455 ,  C23C16/36 ,  C23C16/56 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/324

Abstract: Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.

公开(公告)号：US20200006064A1

公开(公告)日：2020-01-02

申请号：US16567044

申请日：2019-09-11

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Zhelin Sun ,  Mihaela Balseanu ,  Li-Qun Xia ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: H01L21/02 ,  C23C16/56

Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.

公开(公告)号：US20240194479A1

公开(公告)日：2024-06-13

申请号：US18555342

申请日：2021-04-22

Applicant: Applied Materials, Inc.

Inventor： Zhelin Sun ,  Kwang Soo Huh ,  Lai Zhao ,  Soo Yong Choi

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/0228 ,  H01L21/02164 ,  H01L21/02189 ,  H01L21/02274 ,  H01L29/786

Abstract: Embodiments of the disclosure relate to articles and transistor structures and methods of preparation and use thereof, including a substrate and an amorphous oxide film overlaying at least a portion of the substrate, where the amorphous oxide film includes a first oxide and a second oxide. The first oxide can include zirconium oxide (ZrO2), hafnium oxide (HfO2) or a combination thereof, the second oxide can include silicon dioxide (SiO2), aluminum oxide (Al2O3), nitric oxide (NO) or combinations thereof. The amorphous oxide film can conformal and have a porosity of less than about 1% and may have a dielectric constant (k) of about 8 to about 28.

公开(公告)号：US10957532B2

公开(公告)日：2021-03-23

申请号：US16567044

申请日：2019-09-11

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Zhelin Sun ,  Mihaela Balseanu ,  Li-Qun Xia ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/04 ,  C23C16/455 ,  C23C16/36

Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.

公开(公告)号：US20180301333A1

公开(公告)日：2018-10-18

申请号：US15951655

申请日：2018-04-12

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Zhelin Sun ,  Mihaela Balseanu ,  Li-Qun Xia ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: H01L21/02 ,  C23C16/56

CPC classification number: H01L21/02326 ,  C23C16/045 ,  C23C16/36 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/02337

Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.