公开(公告)号：US20160042961A1

公开(公告)日：2016-02-11

申请号：US14453023

申请日：2014-08-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Hamid Tavassoli ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid D. Rauf ,  Richard Fovell ,  Fernando M. Silveira ,  Mark Markovsky

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01J37/3233 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32908

Abstract: A plasma reactor has an electron beam source as a plasma source and a rotation motor coupled to rotate the workpiece support about a rotation axis that is transverse to an emission path of said electron beam source.

Abstract translation: 等离子体反应器具有作为等离子体源的电子束源和旋转马达，该旋转马达被耦合以围绕横向于所述电子束源的发射路径的旋转轴线旋转工件支撑件。

公开(公告)号：US10904996B2

公开(公告)日：2021-01-26

申请号：US15710667

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Travis Lee Koh ,  Haitao Wang ,  Philip Allan Kraus ,  Vijay D. Parkhe ,  Daniel Distaso ,  Christopher A. Rowland ,  Mark Markovsky ,  Robert Casanova

IPC: H05H1/34 ,  H02N13/00 ,  H05B7/18 ,  H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.