公开(公告)号：US11798820B2

公开(公告)日：2023-10-24

申请号：US17094969

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Diwakar Kedlaya ,  Fang Ruan ,  Zubin Huang ,  Ganesh Balasubramanian ,  Kaushik Alayavalli ,  Martin Seamons ,  Kwangduk Lee ,  Rajaram Narayanan ,  Karthik Janakiraman

IPC: H01L21/67 ,  G01N21/3504 ,  G01N21/25 ,  C23C16/52

CPC classification number: H01L21/67069 ,  C23C16/52 ,  G01N21/255 ,  G01N21/3504 ,  H01L21/67253

Abstract: A system may include a main line for delivering a first gas, and a sensor for measuring a concentration of a precursor in the first gas delivered through the main line. The system may further include first and second sublines for providing fluid access to first and second processing chambers, respectively. The first subline may include a first flow controller for controlling the first gas flowed through the first subline. The second subline may include a second flow controller for controlling the first gas flowed through the second subline. A delivery controller may be configured to control the first and second flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and a second gas and a second mixture of the first and second gases into the first and second semiconductor processing chambers, respectively.

公开(公告)号：US11756796B2

公开(公告)日：2023-09-12

申请号：US17318843

申请日：2021-05-12

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Martin Seamons ,  Shan Tang ,  Qi Gao ,  Deven Raj Mittal ,  Kyuha Shim

IPC: H01L21/02 ,  H01L21/3115 ,  H01L21/311

CPC classification number: H01L21/31155 ,  H01L21/0234 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02321 ,  H01L21/31116

Abstract: A method may include providing a substrate having, on a first surface of the substrate, a low dielectric constant layer characterized by a layer thickness. The method may include heating the substrate to a substrate temperature in a range of 200° C. to 550° C.; and directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200° C. to 550° C. As such, the ion implant treatment may include implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.

公开(公告)号：US20220367205A1

公开(公告)日：2022-11-17

申请号：US17318843

申请日：2021-05-12

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Martin Seamons ,  Shan Tang ,  Qi Gao ,  Deven Raj Mittal ,  Kyuha Shim

IPC: H01L21/3115 ,  H01L21/02

Abstract: A method may include providing a substrate having, on a first surface of the substrate, a low dielectric constant layer characterized by a layer thickness. The method may include heating the substrate to a substrate temperature in a range of 200° C. to 550° C.; and directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200° C. to 550° C. As such, the ion implant treatment may include implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.

公开(公告)号：US20210143029A1

公开(公告)日：2021-05-13

申请号：US17094969

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Diwakar Kedlaya ,  Fang Ruan ,  Zubin Huang ,  Ganesh Balasubramanian ,  Kaushik Alayavalli ,  Martin Seamons ,  Kwangduk Lee ,  Rajaram Narayanan ,  Karthik Janakiraman

IPC: H01L21/67 ,  C23C16/52 ,  G01N21/25 ,  G01N21/3504

Abstract: A system may include a main line for delivering a first gas, and a sensor for measuring a concentration of a precursor in the first gas delivered through the main line. The system may further include first and second sublines for providing fluid access to first and second processing chambers, respectively. The first subline may include a first flow controller for controlling the first gas flowed through the first subline. The second subline may include a second flow controller for controlling the first gas flowed through the second subline. A delivery controller may be configured to control the first and second flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and a second gas and a second mixture of the first and second gases into the first and second semiconductor processing chambers, respectively.