公开(公告)号：US20240332009A1

公开(公告)日：2024-10-03

申请号：US18616689

申请日：2024-03-26

Applicant: Applied Materials, Inc.

Inventor： Qixin Shen ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Prashanthi Para ,  Miguel S. Fung ,  Rajesh Prasad ,  Fenglin Wang ,  Shan Tang ,  Kyu-Ha Shim

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02321 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/67213

Abstract: Exemplary methods of semiconductor processing may include forming a layer of silicon nitride on a semiconductor substrate. The layer of silicon nitride may be characterized by a first roughness. The methods may include performing a post-deposition treatment on the layer of silicon nitride. The methods may include reducing a roughness of the layer of silicon nitride such that the layer of silicon nitride may be characterized by a second roughness less than the first roughness.

公开(公告)号：US11756796B2

公开(公告)日：2023-09-12

申请号：US17318843

申请日：2021-05-12

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Martin Seamons ,  Shan Tang ,  Qi Gao ,  Deven Raj Mittal ,  Kyuha Shim

IPC: H01L21/02 ,  H01L21/3115 ,  H01L21/311

CPC classification number: H01L21/31155 ,  H01L21/0234 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02321 ,  H01L21/31116

Abstract: A method may include providing a substrate having, on a first surface of the substrate, a low dielectric constant layer characterized by a layer thickness. The method may include heating the substrate to a substrate temperature in a range of 200° C. to 550° C.; and directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200° C. to 550° C. As such, the ion implant treatment may include implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.

公开(公告)号：US20220367205A1

公开(公告)日：2022-11-17

申请号：US17318843

申请日：2021-05-12

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Martin Seamons ,  Shan Tang ,  Qi Gao ,  Deven Raj Mittal ,  Kyuha Shim

IPC: H01L21/3115 ,  H01L21/02

Abstract: A method may include providing a substrate having, on a first surface of the substrate, a low dielectric constant layer characterized by a layer thickness. The method may include heating the substrate to a substrate temperature in a range of 200° C. to 550° C.; and directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200° C. to 550° C. As such, the ion implant treatment may include implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.

公开(公告)号：US20230298892A1

公开(公告)日：2023-09-21

申请号：US18016926

申请日：2021-07-21

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Rajesh Prasad ,  Karthik Janakiraman ,  Gautam K. Hemani ,  Krishna Nittala ,  Shan Tang ,  Qi Gao

IPC: H01L21/265 ,  H01L21/02

CPC classification number: H01L21/26506 ,  H01L21/02532 ,  H01L21/02592

Abstract: Exemplary methods of semiconductor processing may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by a first amount of hydrogen incorporation. The methods may include performing a beamline ion implantation process or plasma doping process on the layer of amorphous silicon. The methods may include removing hydrogen from the layer of amorphous silicon to a second amount of hydrogen incorporation less than the first amount of hydrogen incorporation.