公开(公告)号：US20250163607A1

公开(公告)日：2025-05-22

申请号：US18516728

申请日：2023-11-21

Applicant: Applied Materials, Inc.

Inventor： Justin GAU ,  Shekhar ATHANI ,  Rahul KOZHIKKALKANDI ,  Nithin ALEX ,  Adib KHAN ,  Qiwei LIANG ,  Lancelot HUANG ,  Junghoon KIM ,  Hyunjun KIM ,  Douglas A. BUCHBERGER, JR. ,  Vishwas Kumar PANDEY ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Dmitry LUBOMIRSKY

IPC: C30B25/08 ,  C30B25/12 ,  C30B25/14

Abstract: Disclosed herein is a processing chamber for a low temperature epitaxy deposition and components of the same. The processing chamber includes a dome lid coupled with a lid liner via a lid liner separator; a remote plasma source disposed outside the dome lid and operable to energize a process gas; a gas ring disposed under the dome lid and coupled with a gas ring liner via a gas ring liner separator; a showerhead disposed under the gas ring; a susceptor disposed below the showerhead and operable to heat a substrate by conduction; and a side wall disposed under the gas ring and coupled with a wall liner via a wall liner separator. The cleaning method of the processing chamber is also disclosed.