公开(公告)号：US20240120220A1

公开(公告)日：2024-04-11

申请号：US17961214

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Ala MORADIAN

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52

CPC classification number: H01L21/67201 ,  C23C16/45502 ,  C23C16/4583 ,  C23C16/463 ,  C23C16/52 ,  H01L21/67167

Abstract: The present disclosure relates to chambers and related methods and structures for batch cooling or heating. In one implementation, a chamber applicable for use in semiconductor manufacturing includes a base, a lid, and one or more sidewalls between the base and the lid. The base, the lid, and the one or more sidewalls at least partially define an internal volume. The chamber includes a cassette disposed in the internal volume. The cassette includes a first outer plate, a second outer plate spaced from the first outer plate, and a plurality of levels between the first outer plate and the second outer plate. The plurality of levels include a plurality of substrate supports spaced from each other between the first outer plate and the second outer plate. The chamber includes one or more baffles disposed outwardly of the cassette.

公开(公告)号：US20230230859A1

公开(公告)日：2023-07-20

申请号：US17919911

申请日：2021-07-12

Applicant: Applied Materials, Inc.

Inventor： Adel George TANNOUS ,  Schubert S. CHU ,  Shu-Kwan LAU ,  Kartik Bhupendra SHAH ,  Zuoming ZHU ,  Ala MORADIAN ,  Surajit KUMAR ,  Srinivasa RANGAPPA ,  Chia Cheng CHIN ,  Vishwas Kumar PANDEY

IPC: H01L21/67 ,  H01L21/687 ,  H05B3/00

CPC classification number: H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68771 ,  H05B3/0047

Abstract: A batch processing chamber and a process kit for use therein are provided. The process kit includes an outer liner having an upper outer liner and a lower outer liner, an inner liner, and a top plate and a bottom plate attached to an inner surface of the inner liner. The top plate and the bottom plate form an enclosure together with the inner liner, and a cassette is disposed within the enclosure. The cassette including shelves configured to retain a plurality of substrates thereon. The inner liner has inlet openings disposed on an injection side of the inner liner and configured to be in fluid communication with a gas injection assembly of a processing chamber, and outlet openings disposed on an exhaust side of the inner liner and configured to be in fluid communication with a gas exhaust assembly of the processing chamber. The inner surfaces of the enclosure comprise material configured to cause black-body radiation within the enclosure.

公开(公告)号：US20220223383A1

公开(公告)日：2022-07-14

申请号：US17600243

申请日：2020-03-13

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Hansel LO ,  Christopher S. OLSEN ,  Tobin KAUFMAN-OSBORN ,  Tobin MAN-OSBORN ,  Rene GEORGE ,  Lara HAWRYLCHAK

IPC: H01J37/32 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly that in one embodiment includes a body including a first opening and a second opening opposing the first opening, wherein the opening comprises a first end and a second end opposing the first end, and a flow valve disposed between the first opening and the second opening, the flow valve coupled to the body by a rotatable shaft that provides movement of the flow valve in angles between about 0 degrees and about 90 degrees relative to a central axis of the processing chamber.

公开(公告)号：US20220165547A1

公开(公告)日：2022-05-26

申请号：US17103697

申请日：2020-11-24

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Eric Kihara SHONO ,  Christopher S. OLSEN ,  Tobin KAUFMAN-OSBORN ,  Erika HANSEN ,  Rene GEORGE ,  Lara HAWRYLCHAK ,  Hansel LO ,  Kartik Bhupendra SHAH

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  C23C16/455

Abstract: Provided herein is a gas source comprising a flow conduit having an interior volume and an open end, a remote plasma source fluidly coupled to the flow conduit, a secondary gas source extending inwardly of the interior volume of the flow conduit, the secondary gas source including at least one gas port therein positioned to flow a secondary gas inwardly of the interior volume of the flow conduit.

公开(公告)号：US20240112931A1

公开(公告)日：2024-04-04

申请号：US17959189

申请日：2022-10-03

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Kartik Bhupendra SHAH ,  Ala MORADIAN

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67161 ,  H01L21/02282 ,  H01L21/67253

Abstract: The present disclosure relates to cassette structures and related methods for batch processing in epitaxial deposition operations. In one implementation, a cassette configured for disposition in a substrate processing chamber includes a first wall, a second wall spaced from the first wall, and one or more sidewalls extending between and coupled to the first wall and the second wall. The cassette includes one or more inlet openings formed in the one or more sidewalls, and one or more outlet openings formed in the one or more sidewalls opposite the one or more inlet openings. The cassette includes a plurality of levels that include a plurality of substrate supports mounted to the one or more sidewalls and spaced from each other along the one or more sidewalls.

公开(公告)号：US20230212742A1

公开(公告)日：2023-07-06

申请号：US17568404

申请日：2022-01-04

Applicant: Applied Materials, Inc.

Inventor： Ala MORADIAN ,  Vishwas Kumar PANDEY ,  Lori D. WASHINGTON ,  Miao-Chun CHEN

IPC: C23C16/24 ,  C23C16/52

CPC classification number: C23C16/24 ,  C23C16/52

Abstract: Embodiments herein provide for a method of processing a semiconductor substrate. The method described herein may include receiving a first input corresponding to a first geometric hardware configuration of a process chamber, receiving a second input corresponding to a first process recipe of the process chamber, determining, based on the first input and the second input, a first purge gas flow rate for the process chamber, measuring a deposition characteristic of the process chamber via a first sensor, determining, based on the first input, the second input, and the measured deposition characteristic, a second purge gas flow rate, the second purge gas flow rate different from the first purge gas flow rate, and flowing a purge gas at the second purge gas flow rate during a deposition process.

公开(公告)号：US20230133402A1

公开(公告)日：2023-05-04

申请号：US17968561

申请日：2022-10-18

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Kartik Bhupendra SHAH ,  Chaitanya Anjaneyalu PRASAD ,  Vishwas Kumar PANDEY ,  AnilKumar BODEPUDI ,  Erika HANSEN

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458

Abstract: The present disclosure relates to a gas injection module for a process chamber. The process chamber includes a chamber body, a rotatable substrate support disposed inside a process volume of the chamber body, the substrate support configured to have a rotational spin rate; an inlet port formed in the chamber body, and an injection module coupled to the inlet port. The injection module includes a body, one or more gas inlets coupled to the body, and a plurality of nozzles formed in a supply face of the body, the supply face configured to face inside the chamber body, and gas exiting from the injection module is configured to have a flow rate; the process chamber also includes a controller configured to operate the process chamber such that the ratio of the flow rate to the rotational spin rate is between about 1/3 and 3.

公开(公告)号：US20230028054A1

公开(公告)日：2023-01-26

申请号：US17958282

申请日：2022-09-30

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Kartik SHAH ,  Hansel LO ,  Tobin KAUFMAN-OSBORN ,  Rene GEORGE ,  Lara HAWRYLCHAK ,  Erika HANSEN

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52 ,  C23C16/458

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US20200219703A1

公开(公告)日：2020-07-09

申请号：US16823936

申请日：2020-03-19

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Kartik SHAH ,  Christopher S. OLSEN ,  Agus Sofian TJANDRA ,  Hansel LO ,  Eric Kihara SHONO ,  Hemantha RAJU

IPC: H01J37/32 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.

公开(公告)号：US20190032216A1

公开(公告)日：2019-01-31

申请号：US16049239

申请日：2018-07-30

Applicant: Applied Materials, Inc.

Inventor： Kartik SHAH ,  Vishwas Kumar PANDEY ,  Kailash PRADHAN ,  Sairaju TALLAVARJULA ,  Rene GEORGE ,  Eric Kihara SHONO ,  Philip A. BOTTINI ,  Roger CURTIS

IPC: C23C16/455

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.