公开(公告)号：US20160276162A1

公开(公告)日：2016-09-22

申请号：US15071479

申请日：2016-03-16

Applicant: Applied Materials, Inc.

Inventor： Wei LIU ,  Abhilash J. MAYUR ,  Phillip STOUT

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01L21/02167 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3115 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68771

Abstract: Embodiments described herein relate to methods for forming or treating material layers on semiconductor substrates. In one embodiment, a method for performing an atomic layer process includes delivering a species to a surface of a substrate at a first temperature, followed by spike annealing the surface of the substrate to a second temperature to cause a reaction between the species and the molecules on the surface of the substrate. The second temperature is higher than the first temperature. By repeating the delivering and spike annealing processes, a conformal layer is formed on the surface of the substrate or a conformal etching process is performed on the surface of the substrate.

Abstract translation: 本文所述的实施例涉及在半导体衬底上形成或处理材料层的方法。 在一个实施例中，用于执行原子层过程的方法包括在第一温度下将物质输送到衬底的表面，随后将衬底的表面尖峰退火到第二温度以引起物质和分子之间的反应 在基板的表面上。 第二温度高于第一温度。 通过重复输送和尖峰退火处理，在基板的表面上形成保形层，或者在基板的表面上执行保形蚀刻工艺。

公开(公告)号：US20210069745A1

公开(公告)日：2021-03-11

申请号：US17013462

申请日：2020-09-04

Applicant: Applied Materials, Inc.

Inventor： Alexander N. LERNER ,  Roey SHAVIV ,  Phillip STOUT ,  Prashanth KOTHNUR ,  Joseph M. RANISH

IPC: B05D1/00 ,  B05B1/00 ,  B05B15/60 ,  B05B1/18 ,  B05B11/00 ,  B05B12/14 ,  B05B1/16

Abstract: Embodiments of the present disclosure generally relate to organic vapor deposition systems and substrate processing methods related thereto. In one embodiment, a processing system comprises a lid assembly and a plurality of material delivery systems. The lid assembly includes lid plate having a first surface and a second surface disposed opposite of the first surface and a showerhead assembly coupled to the first surface. The showerhead assembly comprises a plurality of showerheads. Individual ones of the plurality of material delivery systems are fluidly coupled to one or more of the plurality of showerheads and are disposed on the second surface of the lid plate. Each of the material delivery systems comprise a delivery line, a delivery line valve disposed on the delivery line, a bypass line fluidly coupled to the delivery line at a point disposed between the delivery line valve and the showerhead, and a bypass valve disposed on the bypass line.

公开(公告)号：US20150136732A1

公开(公告)日：2015-05-21

申请号：US14547702

申请日：2014-11-19

Applicant: Applied Materials, Inc.

Inventor： Xianmin TANG ,  Ludovic GODET ,  Guojun LIU ,  Jing TANG ,  Phillip STOUT ,  Rong TAO

IPC: C23C16/56 ,  C23C14/50 ,  C23C16/458 ,  C23C14/00

CPC classification number: C23C14/046

Abstract: A method and apparatus for depositing films on a substrate is described. The method includes depositing a film on a substrate with feature formed therein or thereon. The feature includes a first surface and a second surface that are at different levels. A least a portion of the deposited film is removed by exposing the substrate to an ion flux from a linear ion source. The ion flux has an ion angular spread of less than or equal to 90 degrees and greater than or equal to 15 degrees. In certain embodiments, the feature can be a nanoscale, high aspect ratio feature such as narrow, deep trench, a small diameter, deep hole, or a dual damascene structure. Such features are often found in integrated circuit devices.

Abstract translation: 描述了一种在衬底上沉积膜的方法和装置。 该方法包括在其上或其上形成特征的基底上沉积膜。 该特征包括处于不同水平的第一表面和第二表面。 通过将衬底暴露于来自线性离子源的离子通量来去除沉积膜的至少一部分。 离子通量具有小于或等于90度且大于或等于15度的离子角度扩展。 在某些实施例中，特征可以是纳米尺度的高纵横比特征，例如窄的，深的沟槽，小直径，深孔或双镶嵌结构。 这些特征通常在集成电路器件中找到。