公开(公告)号：US20210123136A1

公开(公告)日：2021-04-29

申请号：US17084184

申请日：2020-10-29

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Liqi Wu ,  Pratham Jain ,  Jeffrey W. Anthis ,  Mark Saly ,  Mei Chang ,  David Thompson

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/34 ,  C23C16/56

Abstract: The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.

公开(公告)号：US20190080904A1

公开(公告)日：2019-03-14

申请号：US16129223

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Chang Ke ,  Pratham Jain ,  Benjamin Schmiege ,  Guoqiang Jian ,  Michael S. Jackson ,  Lei Zhou ,  Paul F. Ma ,  Liqi Wu

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/033

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.