公开(公告)号：US12020992B2

公开(公告)日：2024-06-25

申请号：US17584669

申请日：2022-01-26

Applicant: Applied Materials, Inc. ,  NATIONAL UNIVERSITY OF SINGAPORE

Inventor： Prayudi Lianto ,  Guan Huei See ,  Arvind Sundarrajan ,  Muhammad Avicenna Naradipa ,  Andrivo Rusydi

IPC: H01L21/66 ,  G01N13/00 ,  H01L23/00

CPC classification number: H01L22/12 ,  G01N13/00 ,  H01L24/80 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Methods and apparatus for processing a first substrate and a second substrate are provided herein. For example, a method of processing a substrate using extended spectroscopic ellipsometry (ESE) includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and a second surface of a second substrate, which is different than the first substrate, determining in-situ ESE data from each of the first surface and the second surface during processing of the first substrate and the second substrate, measuring a change of phase and amplitude in determined in-situ ESE data, and determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate using simultaneously complex dielectric function, optical conductivity, and electronic correlations from the measured change of phase and amplitude in the in-situ ESE data.

公开(公告)号：US20230077737A1

公开(公告)日：2023-03-16

申请号：US17474394

申请日：2021-09-14

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  Marvin L. Bernt ,  Prayudi Lianto

IPC: H01L21/768 ,  H01L21/288 ,  H01L23/532

Abstract: Exemplary methods of plating are described. The methods may include contacting a patterned substrate with a plating bath in a plating chamber. The patterned substrate includes at least one metal interconnect with a contact surface that is exposed to the plating bath. The metal interconnect is made of a first metal characterized by a first reduction potential. The methods further include plating a diffusion layer on the contact surface of the metal interconnect. The diffusion layer is made of a second metal characterized by a second reduction potential that is larger than the first reduction potential of the first metal in the metal interconnects. The plating bath also includes one or more ions of the second metal and a grain refining compound that reduces the formation of pinhole defects in the diffusion layer.

公开(公告)号：US11421316B2

公开(公告)日：2022-08-23

申请号：US16584695

申请日：2019-09-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi Lianto ,  Mohamed Rafi ,  Muhammad Azim Bin Syed Sulaiman ,  Guan Huei See ,  Ang Yu Xin Kristy ,  Karthik Elumalai ,  Sriskantharajah Thirunavukarasu ,  Arvind Sundarrajan

IPC: H01L23/48 ,  H01L23/52 ,  C23C14/54 ,  H01L21/67 ,  H01L23/00

Abstract: Methods and apparatus for producing fine pitch patterning on a substrate. Warpage correction of the substrate is accomplished on a carrier or carrier-less substrate. A first warpage correction process is performed on the substrate by raising and holding a temperature of the substrate to a first temperature and cooling the carrier-less substrate to a second temperature. Further wafer level packaging processing is then performed such as forming vias in a polymer layer on the substrate. A second warpage correction process is then performed on the substrate by raising and holding a temperature of the substrate to a third temperature and cooling the substrate to a fourth temperature. With the warpage of the substrate reduced, a redistribution layer may be formed on the substrate with a 2/2 μm l/s fine pitch patterning.

公开(公告)号：US11309278B2

公开(公告)日：2022-04-19

申请号：US16520680

申请日：2019-07-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi Lianto ,  Guan Huei See ,  Sriskantharajah Thirunavukarasu ,  Arvind Sundarrajan ,  Xundong Dai ,  Peter Khai Mum Fung

IPC: G11C16/04 ,  H01L23/00 ,  B23K101/40 ,  B23K20/02

Abstract: Methods for bonding substrates used, for example, in substrate-level packaging, are provided herein. In some embodiments, a method for bonding substrates includes: performing electrochemical deposition (ECD) to deposit at least one material on each of a first substrate and a second substrate, performing chemical mechanical polishing (CMP) on the first substrate and the second substrate to form a bonding interface on each of the first substrate and the second substrate, positioning the first substrate on the second substrate so that the bonding interface on the first substrate aligns with the bonding interface on the second substrate, and bonding the first substrate to the second substrate using the bonding interface on the first substrate and the bonding interface on the second substrate.

公开(公告)号：US10319601B2

公开(公告)日：2019-06-11

申请号：US15467866

申请日：2017-03-23

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Prerna Goradia ,  Prayudi Lianto ,  Jie Zeng ,  Arvind Sundarrajan ,  Robert Jan Visser ,  Guan Huei See

IPC: H01L21/3105 ,  H01L21/3205 ,  C09G1/02 ,  C09K3/14 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K13/06 ,  B24B1/00 ,  B24B37/04 ,  H01L21/306

Abstract: A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100 nm and an outer surface of ceria, and ½-3 wt. % of at least one amine.

公开(公告)号：US20240332005A1

公开(公告)日：2024-10-03

申请号：US18192563

申请日：2023-03-29

Applicant: Applied Materials, Inc.

Inventor： Wenhui Li ,  Bo Xie ,  Li-Qun Xia ,  Prayudi Lianto ,  Shanshan Yao

IPC: H01L21/02

CPC classification number: H01L21/02211 ,  H01L21/02167 ,  H01L21/0234

Abstract: Embodiments include semiconductor processing methods to form dielectric films on semiconductor substrates are described. The methods may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The methods may include providing an inert precursor to the processing region of the semiconductor processing chamber. The methods may include generating plasma effluents of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor. The methods may include depositing a silicon-containing material on the substrate.

公开(公告)号：US11931855B2

公开(公告)日：2024-03-19

申请号：US16885753

申请日：2020-05-28

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Tapash Chakraborty ,  Prayudi Lianto ,  Prerna Sonthalia Goradia ,  Giback Park ,  Chintan Buch ,  Pin Gian Gan ,  Alex Hung

IPC: B24B37/04 ,  B24B21/04 ,  B24B37/07 ,  B24B37/14

CPC classification number: B24B37/042 ,  B24B21/04 ,  B24B37/14 ,  B24B37/07

Abstract: Embodiments of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates. More specifically, embodiments of the present disclosure relate to planarization of surfaces on substrates for advanced packaging applications, such as surfaces of polymeric material layers. In one implementation, the method includes mechanically grinding a substrate surface against a polishing surface in the presence of a grinding slurry during a first polishing process to remove a portion of a material formed on the substrate; and then chemically mechanically polishing the substrate surface against the polishing surface in the presence of a polishing slurry during a second polishing process to reduce any roughness or unevenness caused by the first polishing process.

公开(公告)号：US11899376B1

公开(公告)日：2024-02-13

申请号：US17900124

申请日：2022-08-31

Applicant: Applied Materials, Inc.

Inventor： Prayudi Lianto ,  Liu Jiang ,  Marvin Louis Bernt ,  El Mehdi Bazizi ,  Guan Huei See

IPC: G03F9/00 ,  G03F7/00

CPC classification number: G03F7/70633 ,  G03F9/7088

Abstract: A method for forming alignment marks leverages pad density and critical dimensions (CDs). In some embodiments, the method includes forming first and second alignment marks on a first substrate and a second substrate where the alignment marks have a width within 5% of the associated CD of copper pads on the respective substrates and forming a first and second dummy patterns around the first and second alignment marks. The first and second dummy patterns have dummy pattern densities within 5% of the respective copper pad density of the first and second substrates and CDs within 5% of the respective copper pad CDs. In some embodiments, alignment marks with physical dielectric material protrusions and recesses on opposite substrate surfaces may further enhance bonding.

公开(公告)号：US20180277384A1

公开(公告)日：2018-09-27

申请号：US15467866

申请日：2017-03-23

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Prerna Goradia ,  Prayudi Lianto ,  Jie Zeng ,  Arvind Sundarrajan ,  Robert Jan Visser ,  Guan Huei See

IPC: H01L21/3105 ,  H01L21/321 ,  H01L21/3205 ,  H01L21/67 ,  C09G1/02 ,  C09K3/14

CPC classification number: H01L21/31058 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/32051

Abstract: A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100 nm and an outer surface of ceria, and ½-3 wt. % of at least one amine.

公开(公告)号：US10002771B1

公开(公告)日：2018-06-19

申请号：US15728604

申请日：2017-10-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi Lianto ,  Kuma Hsiung ,  Eric J. Bergman ,  John L. Klocke ,  Mohamed Rafi ,  Muhammad Azim ,  Guan Huei See ,  Arvind Sundarrajan

IPC: H01L21/3105 ,  H01L21/687

CPC classification number: H01L21/31053 ,  H01L21/31058 ,  H01L21/68764

Abstract: A polymer layer on a substrate may be treated with ozone gas or with deionized water and ozone gas to increase a removal rate of the polymer layer in a chemical mechanical polishing (CMP) process. The ozone gas may be diffused directly into the polymer layer or through a thin layer of deionized water on the surface of the polymer layer and into the polymer layer. The deionized water may also be heated during the process to further enhance the diffusion of the ozone gas into the polymer layer.