公开(公告)号：US20230334201A1

公开(公告)日：2023-10-19

申请号：US17723285

申请日：2022-04-18

Applicant: Applied Materials, Inc.

Inventor： Preetham Rao ,  Raechel Tan ,  Ananda Sankar Kundu ,  Wolfgang Aderhold

IPC: G06F30/18 ,  G05B17/02 ,  G06F30/27

CPC classification number: G06F30/27 ,  G05B17/02 ,  G06F30/18 ,  G06F2119/08

Abstract: Embodiments disclosed herein include a method of developing a reduced order model (ROM) for a model based controller. In an embodiment, the method comprises obtaining a design of a plant, and building a detailed model of the thermal network of the plant from the design of the plant. In an embodiment, the method further comprises obtaining a training input recipe, and running the detailed model using the training input recipe. In an embodiment, the method further comprises generating a plurality of snapshots, wherein each snapshot includes the temperatures of a plurality of components in the detailed model, and utilizing a dynamic mode decomposition with control (DMDc) operation in order to extract the ROM from the plurality of snapshots.

公开(公告)号：US11492704B2

公开(公告)日：2022-11-08

申请号：US16539317

申请日：2019-08-13

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Lit Ping Lam ,  Preetham Rao ,  Kartik Shah ,  Ian Ong ,  Nyi O. Myo ,  Brian H. Burrows

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C23C16/458

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

公开(公告)号：US20230297740A1

公开(公告)日：2023-09-21

申请号：US17695619

申请日：2022-03-15

Applicant: Applied Materials, Inc.

Inventor： Preetham Rao ,  Surajit Kumar ,  Dongming Iu ,  Wolfgang Aderhold

IPC: G06F30/27 ,  G06K9/62

CPC classification number: G06F30/27 ,  G06K9/6256 ,  G06F2119/08

Abstract: Embodiments disclosed herein include a method of modeling a rapid thermal processing (RTP) tool. In an embodiment, the method comprises developing a lamp model of an RTP tool, wherein the lamp model comprises a plurality of lamp zones, calculating an irradiance graph for the plurality of lamp zones, multiplying irradiance values of the plurality of lamp zones in the irradiance graph by a power of an existing RTP tool at a given time during a process recipe, summing the multiplied irradiance values for the plurality of lamp zones to form an irradiation graph of the lamp model, using the irradiation graph as an input to a machine learning algorithm, and outputting the temperature across a hypothetical substrate from the machine learning algorithm.

公开(公告)号：US11492699B2

公开(公告)日：2022-11-08

申请号：US17177875

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Suhas Bangalore Umesh ,  Preetham Rao ,  Shirish A. Pethe ,  Fuhong Zhang ,  Kishor Kumar Kalathiparambil ,  Martin Lee Riker ,  Lanlan Zhong

IPC: C23C14/50 ,  C23C14/54 ,  C23C14/34

Abstract: Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

公开(公告)号：US10000847B2

公开(公告)日：2018-06-19

申请号：US14863063

申请日：2015-09-23

Applicant: Applied Materials, Inc.

Inventor： Preetham Rao ,  Subramani Iyer ,  Kartik Shah ,  Mehran Behdjat

IPC: H05B3/68 ,  C23C16/00 ,  C23C16/458 ,  H01L21/687 ,  H01L21/67

CPC classification number: C23C16/4583 ,  C23C16/4581 ,  H01L21/67098 ,  H01L21/68785

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

公开(公告)号：US11807931B2

公开(公告)日：2023-11-07

申请号：US17961040

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Lit Ping Lam ,  Preetham Rao ,  Kartik Shah ,  Ian Ong ,  Nyi O. Myo ,  Brian H. Burrows

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C23C16/458

CPC classification number: C23C16/45572 ,  C23C16/4583 ,  C23C16/46

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

公开(公告)号：US11171023B2

公开(公告)日：2021-11-09

申请号：US15288404

申请日：2016-10-07

Applicant: Applied Materials, Inc.

Inventor： Schubert S. Chu ,  Douglas E. Holmgren ,  Kartik Shah ,  Palamurali Gajendra ,  Nyi O. Myo ,  Preetham Rao ,  Kevin Joseph Bautista ,  Zhiyuan Ye ,  Martin A. Hilkene ,  Errol Antonio C. Sanchez ,  Richard O. Collins

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/324 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US10677830B2

公开(公告)日：2020-06-09

申请号：US15649600

申请日：2017-07-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Jacob Newman ,  Preetham Rao ,  Yuichi Wada ,  Vinodh Ramachandran

IPC: G01R29/08 ,  H01L21/67 ,  H05B6/80 ,  H05B6/64

Abstract: An apparatus for relaying microwave field intensity in a microwave cavity. In some embodiments, the apparatus comprises a microwave transparent substrate with at least one Radio Frequency (RF) detector that is capable of detecting a microwave field and generating a signal associated with a field intensity of the detected microwave field and a transmitter that receives the signal associated with the detected microwave field from the RF detector and transmits or stores information about the detected microwave field intensity. In some embodiments, the apparatus relays the microwave intensity via a wired, wireless, or optical transmitter located in proximity of the RF detector.

公开(公告)号：US20180323091A1

公开(公告)日：2018-11-08

申请号：US15966211

申请日：2018-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Preetham Rao ,  Dennis Ivanov ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow

IPC: H01L21/67 ,  H05B6/64 ,  H05B6/66 ,  H05B6/70

CPC classification number: H01L21/67115 ,  H05B6/6402 ,  H05B6/664 ,  H05B6/705 ,  H05B6/707

Abstract: Methods and apparatus for uniform thermal distribution across semiconductor batches are provided herein. According to one embodiment, a microwave oven for semiconductor processing, comprising a thermal housing having a cavity and a plurality of input ports, a power source configured to provide a microwave signal to the cavity of the thermal housing via the plurality of input ports, a phase shifter disposed between the power source and the input ports, wherein the phase shifter is configured to vary a phase difference between two or more signals provided to it; and a controller communicatively coupled to the phase shifter and configured to control the phase difference between the two or more signals.

公开(公告)号：US20250086342A1

公开(公告)日：2025-03-13

申请号：US18826639

申请日：2024-09-06

Applicant: Applied Materials, Inc.

Inventor： Ala Moradian ,  Umesh Kelkar ,  Prashanth Kothnur ,  Karthik Ramanathan ,  Preetham Rao ,  Mudit Pasagadagula ,  Anup Kumar D. Doddamane

IPC: G06F30/17

Abstract: A method includes receiving, via a graphical user interface (GUI), by a processing device, a first user input to view data associated with a first process chamber in a first chamber data mode. Data of the first chamber data mode includes data of a process operation performed in the first process chamber. The method further includes providing, for display on the GUI, first display data of the first data chamber mode responsive to receiving the first user input. The method further includes receiving a second user input to view data associated with the first process chamber in a second chamber data mode. Data of the second chamber data mode includes data of a virtual process operation performed by a virtual representation of the first process chamber. The method further includes providing, for display on the GUI, second display data of the second data chamber mode.