公开(公告)号：US20240153745A1

公开(公告)日：2024-05-09

申请号：US17981394

申请日：2022-11-05

Applicant: Applied Materials, Inc.

Inventor： Katherine Woo ,  Jennifer Y. Sun ,  Jian Li ,  Wenhao Zhang ,  Mayur Govind Kulkarni ,  Chidambara A. Ramalingam ,  Ryan Sheil ,  Martin J. Seamons ,  Nitin Deepak

IPC: H01J37/32 ,  C23C16/455 ,  C23C28/04 ,  C25D11/18

CPC classification number: H01J37/32495 ,  C23C16/45525 ,  C23C28/046 ,  C25D11/18 ,  H01J37/32467

Abstract: Semiconductor fabrication component preparation methods are described. In embodiments, the methods include forming a first layer on a surface of the semiconductor fabrication component. The first layer is characterized by a porosity of greater than or about 0.01 vol. %. The methods further include depositing a second layer on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %. Treated semiconductor fabrication components are also described. In embodiments, the treated components include a first layer formed in the surface of the semiconductor fabrication component, where the first layer is characterized by a porosity of greater than or about 0.01 vol. %., and a second layer positioned on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %.

公开(公告)号：US20240347336A1

公开(公告)日：2024-10-17

申请号：US18135434

申请日：2023-04-17

Applicant: Applied Materials, Inc.

Inventor： Nitin Deepak ,  Ryan Sheil ,  Jennifer Y. Sun ,  Zhijun Jiang ,  Katherine Woo

IPC: H01L21/02 ,  C23C16/08 ,  H01J37/32

CPC classification number: H01L21/02178 ,  C23C16/08 ,  H01J37/32091 ,  H01J37/321 ,  H01L21/0214 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01J2237/332

Abstract: Exemplary processing methods may include providing a component for semiconductor processing to a processing region of a processing chamber. The methods may include providing one or more deposition precursors to the processing region. The one or more deposition precursors may include a metal-containing precursor and a fluorine-containing precursor. The methods may include depositing a layer of material on the component for semiconductor processing in the processing region. The layer of material comprises a metal-and-fluorine-containing material.

公开(公告)号：US20250003061A1

公开(公告)日：2025-01-02

申请号：US18343351

申请日：2023-06-28

Applicant: Applied Materials, Inc.

Inventor： Nitin Deepak ,  Ryan Sheil ,  Katherine Woo ,  Juan Carlos Rocha-Alvarez ,  Jennifer Y. Sun

IPC: C23C16/40 ,  C23C16/34

Abstract: Exemplary processing methods may include providing a component for semiconductor processing to a processing region of a processing chamber. The methods may include providing one or more interface deposition precursors to the processing region. The methods may include depositing a layer of interface material on the component for semiconductor processing in the processing region. The methods may include providing one or more coating deposition precursors to the processing region. The methods may include depositing a layer of coating material on the component for semiconductor processing in the processing region.

公开(公告)号：US20240327300A1

公开(公告)日：2024-10-03

申请号：US18128124

申请日：2023-03-29

Applicant: Applied Materials, Inc.

Inventor： Nitin Deepak ,  Katherine Woo ,  Ryan Sheil ,  Juan Carlos Rocha-Alvarez ,  Jennifer Y. Sun

IPC: C04B35/628 ,  C04B35/626

CPC classification number: C04B35/62805 ,  C04B35/62665 ,  C04B35/62836 ,  C04B2235/666 ,  C04B2235/85 ,  C04B2235/9669

Abstract: Exemplary processing methods may include providing a powder to a processing region of a processing chamber. The methods may include providing one or more deposition precursors to the processing region. The methods may include generating plasma effluents of the one or more deposition precursors. The methods may include depositing a layer of material on the powder in the processing region. The layer of material may include a corrosion-resistant material. A temperature within the processing chamber is maintained at less than or about 700° C.